Abstract
Silicon wafers have been the building blocks of the electronic industry for more than 40 years. Wafer size increased from 2 in. in diameter in 1970 the wafer size increased to 300 mm in 2000, enhancing the productivity of the chip manufacturing significantly. With growing diameters, wafer thickness of wafers increased steadily, reaching 775 μm for 300-mm diameter wafers. The primary reason for this increase was the need to ensure safe wafer manufacturing without breakage and to provide sufficient mechanical and thermal stability of the wafers in IC fabrication during processing steps of lithography and heat treatments. Beyond this, silicon wafers also must meet certain defect kinetic properties in device processing, which depend on the wafer thickness as well and are crucial for device yield and economic feasibility.
Keywords
- Silicon Wafer
- Silicon Crystal
- Complementary Metal Oxide Semiconductor
- Wafer Thickness
- Denude Zone
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, access via your institution.
Buying options





References
Moore GE (1965) Cramming more components onto integrated circuits. Electronics 38(8):114–117
Kanda T, Fujiwara T, Takaishi K (12 Jan 2008) SUMCO. Semiconductor International
Huff HR, Fabry L, Kishino S (eds) (2002) Semiconductor silicon 2002, vol 1 and 2. The Electrochemical Society, Inc., Pennington, NJ
Scheel HJ, Fukuda T (eds) (2003) Crystal growth technology. Wiley, New York
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2011 Springer Science+Business Media, LLC
About this chapter
Cite this chapter
Stallhofer, P. (2011). Why Are Silicon Wafers as Thick as They Are?. In: Burghartz, J. (eds) Ultra-thin Chip Technology and Applications. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7276-7_1
Download citation
DOI: https://doi.org/10.1007/978-1-4419-7276-7_1
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4419-7275-0
Online ISBN: 978-1-4419-7276-7
eBook Packages: EngineeringEngineering (R0)