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Silicon Carbide Electronics

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Silicon Carbide Microsystems for Harsh Environments

Part of the book series: MEMS Reference Shelf ((MEMSRS,volume 22))

Abstract

One of the major benefits of silicon carbide for harsh environment microsystems is the ability to create high temperature electronics from a corrosion resistance base material. Because silicon carbide is a wide band semiconductor, it is more robust to high temperature excursions. But silicon carbide electronics requires the ability to create a substrate and thin-film layers that are high purity and can be doped in a controlled manner. Thematerials developments outlined in Chapter 2 lay the foundation for developing silicon carbide electronics. Besides being able to create doped, highpurity films, silicon carbide electronics requires a way to create localized doped regions in order to create specific transistor topologies as well as a metallization scheme for routing signals. This chapter will begin with a generalized process flow for creating silicon carbide electronics, followed by discussions on ion implantation doping and electrical contacts for silicon carbide. Then different electrical device topologies explored in silicon carbide will be described in the context of high power switching, high temperature amplifiers, and wireless communication.

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Authors and Affiliations

  1. Automation & Robotics Research Institute, The University of Texas at Arlington, Arlington, Texas, USA

    Muthu B. J. Wijesundara

  2. Proteus Biomedical Inc., Redwood City, California, USA

    Robert G. Azevedo

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  1. Muthu B. J. Wijesundara
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  2. Robert G. Azevedo
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Correspondence to Muthu B. J. Wijesundara .

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Wijesundara, M.B.J., Azevedo, R.G. (2011). Silicon Carbide Electronics. In: Silicon Carbide Microsystems for Harsh Environments. MEMS Reference Shelf, vol 22. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7121-0_3

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  • DOI: https://doi.org/10.1007/978-1-4419-7121-0_3

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4419-7120-3

  • Online ISBN: 978-1-4419-7121-0

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