Silicon Carbide Electronics

Part of the MEMS Reference Shelf book series (MEMSRS, volume 22)


One of the major benefits of silicon carbide for harsh environment microsystems is the ability to create high temperature electronics from a corrosion resistance base material. Because silicon carbide is a wide band semiconductor, it is more robust to high temperature excursions. But silicon carbide electronics requires the ability to create a substrate and thin-film layers that are high purity and can be doped in a controlled manner. Thematerials developments outlined in Chapter 2 lay the foundation for developing silicon carbide electronics. Besides being able to create doped, highpurity films, silicon carbide electronics requires a way to create localized doped regions in order to create specific transistor topologies as well as a metallization scheme for routing signals. This chapter will begin with a generalized process flow for creating silicon carbide electronics, followed by discussions on ion implantation doping and electrical contacts for silicon carbide. Then different electrical device topologies explored in silicon carbide will be described in the context of high power switching, high temperature amplifiers, and wireless communication.


Silicon Carbide Ohmic Contact Schottky Contact Drift Region High Power Application 
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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.Automation & Robotics Research InstituteThe University of Texas at ArlingtonArlingtonUSA
  2. 2.Proteus Biomedical Inc.Redwood CityUSA

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