ESD Clamps

  • Vladislav A. Vashchenko
  • Andrei Shibkov


The previous chapter described ESD devices with emphasis on the positive and negative feedback effects realized on the structure level of the devices. The positive feedback effects have been identified through the conductivity modulation phenomena in the parasitic n–p–n, p–n–p, or p–n–p–n elementary structures. At the same time, ESD devices already include local and non-local current limiting on the device level. This feature provides the negative feedback that is used to suppress the excessive positive feedback and limit uncontrollable current density increase. Thus, the ESD device structure combines the active device regions with blocking junctions, the drift region, RESURF regions, control electrodes, and the contacts.


Breakdown Voltage Control Electrode Avalanche Breakdown Trigger Circuit Avalanche Diode 
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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.National SemiconductorSanta ClaraUSA
  2. 2.Angstrom Design AutomationSan JoseUSA

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