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ESD Clamps

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Abstract

The previous chapter described ESD devices with emphasis on the positive and negative feedback effects realized on the structure level of the devices. The positive feedback effects have been identified through the conductivity modulation phenomena in the parasitic n–p–n, p–n–p, or p–n–p–n elementary structures. At the same time, ESD devices already include local and non-local current limiting on the device level. This feature provides the negative feedback that is used to suppress the excessive positive feedback and limit uncontrollable current density increase. Thus, the ESD device structure combines the active device regions with blocking junctions, the drift region, RESURF regions, control electrodes, and the contacts.

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Author information

Authors and Affiliations

  1. National Semiconductor, Semiconductor Drive M/S E-155, Santa Clara, CA, 95052, USA

    Vladislav A. Vashchenko

  2. Angstrom Design Automation, 1336 Fruitdale Ave. A3, San Jose, CA, 95126, USA

    Andrei Shibkov

Authors
  1. Vladislav A. Vashchenko
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  2. Andrei Shibkov
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Correspondence to Vladislav A. Vashchenko .

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Vashchenko, V.A., Shibkov, A. (2010). ESD Clamps. In: ESD Design for Analog Circuits. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-6565-3_4

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  • DOI: https://doi.org/10.1007/978-1-4419-6565-3_4

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-6564-6

  • Online ISBN: 978-1-4419-6565-3

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