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Standard and ESD Devices in Integrated Process Technologies

  • Vladislav A. Vashchenko
  • Andrei Shibkov
Chapter

Abstract

In Chapter 2, conductivity modulation mechanisms were discussed based upon examples of these mechanisms in corresponding elementary semiconductor structures. The purpose of Chapter 3 is to describe how these conductivity modulation phenomena are realized in both standard devices supported by electrical design rules of given integrated process technology and free ESD devices developed in the process.

The pulsed safe-operating area (SOA) and physical limitations of the operation regime are discussed first for standard devices in typical integrated process technologies. Then, “free” ESD devices are described in greater detail specific to the device type.

The definition of a “free ESD device” assumes no additional process steps in device formation. A free ESD device can be built using only the available mask layers within physical limits of the process. The device can be formed using a self-aligned approach, where variation of the masks will not change the characteristics, or as a non-self-aligned device. In the last case, the device is sensitive to misalignment of the mask layers, which requires the use of additional measures to guarantee repeatable device characteristics (or acceptable parametric yields) within the specified parameter range.

Keywords

Breakdown Voltage Gate Oxide Conductivity Modulation Avalanche Diode NMOS Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.National SemiconductorSanta ClaraUSA
  2. 2.Angstrom Design AutomationSan JoseUSA

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