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ESD Design for Analog Circuits pp 15–68Cite as

Conductivity Modulation in Semiconductor Structures Under Breakdown and Injection

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Abstract

Understanding semiconductor structure operation under ESD pulse conditions at the physical level is critical for successful protection circuit design. In spite of the use of a variety of ESD protection devices and clamps for analog circuit protection, there are several fundamental physical effects taking place during a high-current ESD event. These effects are discussed in this chapter.

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Author information

Authors and Affiliations

  1. National Semiconductor, Semiconductor Drive M/S E-155, Santa Clara, CA, 95052, USA

    Vladislav A. Vashchenko

  2. Angstrom Design Automation, 1336 Fruitdale Ave. A3, San Jose, CA, 95126, USA

    Andrei Shibkov

Authors
  1. Vladislav A. Vashchenko
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  2. Andrei Shibkov
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Corresponding author

Correspondence to Vladislav A. Vashchenko .

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Vashchenko, V.A., Shibkov, A. (2010). Conductivity Modulation in Semiconductor Structures Under Breakdown and Injection. In: ESD Design for Analog Circuits. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-6565-3_2

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  • DOI: https://doi.org/10.1007/978-1-4419-6565-3_2

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-6564-6

  • Online ISBN: 978-1-4419-6565-3

  • eBook Packages: EngineeringEngineering (R0)

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