• Vladislav A. Vashchenko
  • Andrei Shibkov


Readers proficient in the ESD field may decide to skip this introductory section. The section briefly summarizes the background directly relevant to the ESD field. This is done to facilitate the study of the following chapters for those who are not directly involved in the field or want to refresh the most important aspects of the knowledge. A broader spectrum of ESD background material is brilliantly covered in many books and reviews [1–7] written in the field, as well as in EOS/ESD Symposium Proceedings [8]. The purpose of this section is to summarize the general ESD approach to integrated components design and provide condensed reference material related to the ESD pulse specification, and standards. Finally, the most important definitions used across this book are established.


Analog Circuit Digital Circuit Internal Circuit Conductivity Modulation Avalanche Breakdown 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. [4]
    Voldman SH (2006) ESD RF Technology and Circuits. Wiley, Chichester.CrossRefGoogle Scholar
  2. [8]
    Proceedings of EOSESD Symposiums (1997–2007).Google Scholar
  3. [5]
    Voldman SH (2004) ESD Physics and Devices. Wiley, Chichester.CrossRefGoogle Scholar
  4. [14]
    Sze S (1981) Physics of Semiconductor Devices. Wiley, New York, NY.Google Scholar
  5. [6]
    Voldman SH (2005) ESD Circuits and Devices. Wiley, Chichester.CrossRefGoogle Scholar
  6. [2]
    Dabral S, Maloney TJ (1998) Basic ESD and I/O Design. Wiley, West Sussex.Google Scholar
  7. [12]
    ESD Association (1994) MM-ESD Sensitivity Testing: Machine Model (MM)-Component Level, ESD Association Standard, S5.2.Google Scholar
  8. [10]
    Stadler W (2007) HBM MIL883-STD, Method 3015.7; State-of-the-Art in ESD Standards. 1st International ESD Workshop, South Lake, Tahoe, 127–147.Google Scholar
  9. [11]
    ESD Association (1994) HBM-ESD Sensitivity Testing: Human Body Model (HBM)-Component Level, ESD Association Standard, S5.1.Google Scholar
  10. [13]
    IEC 61000-4-2Electromagnetic Compatibility (EMC) – Part 4-2: Testing and Measurement Techniques – Electrostatic Discharge Immunity Test.Google Scholar
  11. [3]
    Estmark K, Gossner H, Stadler W (2003) Advanced Simulation Methods for ESD Protection. Elsevier, Amsterdam.Google Scholar
  12. [1]
    Amerasekera A, Duvury C (1995) ESD in Silicon Integrated Circuits. Wiley, West Sussex.Google Scholar
  13. [7]
    Vashchenko VA, Hopper P (2005) Bipolar SCR ESD devices. Microelectron Reliab 45:457–471.CrossRefGoogle Scholar
  14. [9]
    Vashchenko VA, Sinkevitch VF (2008) Physical Limitations of Semiconductor Devices. Springer, Berlin.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.National SemiconductorSanta ClaraUSA
  2. 2.Angstrom Design AutomationSan JoseUSA

Personalised recommendations