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Time-To-Failure Models for Selected Failure Mechanisms in Integrated Circuits

  • J.W. McPherson
Chapter

Abstract

Advanced integrated circuits (ICs) are very complex, both in terms of their design and in their usage of many dissimilar materials (semiconductors, insulators, metals, plastic molding compounds, etc.). For cost reductions per device and improved performance, scaling of device geometries has played a critically important role in the success of semiconductors. This scaling (where device geometries are generally reduced by 0.7x for each new technology node and tend to conform to Moore’s Law) has caused the electric fields in the materials to rise (bringing the materials ever closer to their breakdown strength) and current densities in the metallization to rise causing electromigration (EM) concerns.

Keywords

Bonding Ball Thermomechanical Stress Effective Dipole Moment MOSFET Device Stress Migration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • J.W. McPherson
    • 1
  1. 1.Texas Instruments Senior Fellow EmeritusPlanoUSA

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