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Calculation of Thermal Conditions of Magnetotransistors in Continuous and Pulse Modes

  • Alexander A. Ignatiev
  • Alexander V. Lyashenko
Chapter

Abstract

The developed HMT can be used in modes of generation of both continuous and pulse power. The temperature field of the active semiconductor crystal in the HMT structure in these conditions reflects of a sequence of practically rectangular pulses of thermal power, whose peak value is determined by the transistor’s CE. The quasi-stationary mode is most critical for HMT, being the reaction to a long sequence of identical power pulses or identical groups of pulses, so-called “trains” of pulses.

Keywords

Heat Source Temperature Field Thermal Resistance Thermal Power Thermal Emission 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 58.
    Dul’nyov G.N., Semyashkin E.M., Heat exchange in radio-electronic devices, Energiya, Leningrad, 1968.Google Scholar
  2. 59.
    Rotkon L.L., Spokoinyi Yu.E., Maintenance of thermal modes at designing radio electronic devices, Moscow, Soviet radio, 1976.Google Scholar
  3. 61.
    Dul’nyov G.N., Parfyonov V.G., Sigalov A.V., Methods of calculation of thermal modes of devices, Moscow, Radio and Svyaz, 1990.Google Scholar
  4. 62.
    Ovchinnikov S.V., Vasiliev A.V., Lyashenko A.V., Solopov A.A., A program of calculation of a non-stationary temperature field of the semiconductor structure of a powerful magnetoelectronic transistor in a pulse mode: Reg. Certificate No 2004610985 RU, application No 2004610413 of 26.02.2004, Date of registration 21.04.2004.Google Scholar
  5. 63.
    Ovchinnikov S.V., Samoldanov V.N., Lyashenko A.V., Solopov A.A., A program of calculation of the stationary thermal resistance of the multilayered constructive elements of a powerful magnetoelectronic transistor of a rectangular shape: Reg. Certificate No 2004610993 RU, application No 2004610421 of 26.02.2004, Date of registration 21.04.2004.Google Scholar
  6. 64.
    Ovchinnikov S.V., Ignatiev A.A., Lyashenko A.V., Solopov A.A., A program of calculation of the stationary thermal resistance of the constructive elements of a powerful magnetoelectronic transistor in the form of a multilayered cylinder: Reg. Certificate No 2004610986 RU, application No 2004610414 of 26.02.2004, Date of registration 21.04.2004.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • Alexander A. Ignatiev
    • 1
  • Alexander V. Lyashenko
    • 2
  1. 1.Department of PhysicsSaratov State UniversitySaratovRussia
  2. 2.Open Society “Tantal”SaratovRussia

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