Abstract
The bipolar transistor as a radio engineering element is a semiconductor crystal mounted in a case. The crystal is connected to the terminals of the transistor with boil soft wires; besides, a powerful transistor can include matching circuits. These additional elements (boil soft wires, the case, the transistor terminals, and matching circuits) bring essential distortions in the work of the semiconductor crystal and should be contained in the equivalent circuit of the transistor. At modeling of the bipolar transistor, Gummel–Poon’s model was used.
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Notes
- 1.
Agilent Technologies TM (USA) with a frequency band of \(10\,\mathrm{MHz}\mbox{ \textendash }110\,\mathrm{GHz}\), building-up of frequencies up to 325,500, and 1,000 GHz.
- 2.
Designations of “MWO-2002” in used in scheme.
- 3.
MWO-2002 denomination was conserved.
- 4.
\(1\,\mathrm{A}/\mathrm{m}\,=\,79.6\,\mathrm{Oe}\).
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Ignatiev, A.A., Lyashenko, A.V. (2010). Calculation of Parameters of Transistors, Coupling Elements, Magnetotransistors in a Frequency Band Below 100 GHz. In: Heteromagnetic Microelectronics. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-6002-3_7
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DOI: https://doi.org/10.1007/978-1-4419-6002-3_7
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