Advertisement

GD-MOSFET Structure

  • B. Jayant Baliga
Chapter

Abstract

In the previous chapter, it was demonstrated that the specific on-resistance for power MOSFET structures can be greatly reduced by utilizing the two-dimensional charge-coupling concept. In these structures, a uniform doping concentration was assumed for the drift region. Although the electric field profile in this case is superior to that observed for a one-dimensional junction, the electric field was found to be non-uniform through the drift region. This non-uniformity of the electric field is relatively small for devices with low (∼30 V) blocking voltage capability. However, when the desired blocking voltage is large (60–200 V), the electric field varies exponentially with distance in the uniformly doped drift region resulting in a low electric field through a large portion of the distance between the drain and source regions.

Keywords

Breakdown Voltage Gate Bias Drain Voltage Drift Region Drain Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    B.J. Baliga, “Vertical Field Effect Transistors having improved Breakdown Voltage Capability and Low On-state Resistance”, U.S. Patent # 5,637,898, Issued June 10, 1997.Google Scholar
  2. 2.
    B.J. Baliga, “Power Semiconductor Devices having improved High Frequency Switching and Breakdown Characteristics”, U.S. Patent # 5,998,833, Issued December 7, 1999.Google Scholar
  3. 3.
    B.J. Baliga, “Trends in Power Discrete Devices”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract P-2, pp. 5–10, 1997.Google Scholar
  4. 4.
    B.J. Baliga, “Epitaxial Silicon Technology”, Academic Press, New York, 1986.Google Scholar
  5. 5.
    B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer-Science, New York, 2008.CrossRefGoogle Scholar
  6. 6.
    S. Mahalingam and B.J. Baliga, “The Graded Doped Trench MOS Barrier Schottky Rectifier: a Low Forward Drop High Voltage Rectifier”, Solid State Electronics, Vol. 43, pp. 1–9, 1999.CrossRefGoogle Scholar
  7. 7.
    B.J. Baliga, “Silicon RF Power MOSFETs”, World Scientific Publishing Company, Singapore, 2005.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • B. Jayant Baliga
    • 1
  1. 1.Department of Electrical and Computer EngineeringNorth Carolina State UniversityRaleighUSA

Personalised recommendations