SC-MOSFET Structure

  • B. Jayant Baliga


As discussed in Chap. 2, the first power MOSFET structure commercially introduced by the power semiconductor industry was the D-MOSFET structure with the planar gate architecture. The fast switching speed and ruggedness of the D-MOSFET structure were significant advantages compared with the performance of the available bipolar power transistor. In order to reduce the specific on-resistance of the structure, the planar gate topology was replaced with a trench gate topology in the 1990s by creating the power U-MOSFET structure. The significant reduction of the specific on-resistance achieved using this approach has been described in Chap. 3. It has been found that the high input capacitance and large gate transfer charge for the power U-MOSFET structure offsets the benefits of the low specific on-resistance in high frequency applications such as the voltage-regulator-modules (VRMs) used to provide power to microprocessors.


Doping Concentration Gate Oxide Gate Bias Gate Electrode Drain Voltage 
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  1. 1.
    B.J. Baliga and D. Girdhar, “Paradigm Shift in Planar Power MOSFET Technology”, Power Electronics Technology Magazine, pp. 24–32, November 2003.Google Scholar
  2. 2.
    B.J. Baliga, “Power Semiconductor Devices having Laterally Extending Base Shielding Regions that Inhibit Base Reach-Through”, U.S. Patent # 6,791,143, Issued September 14, 2004.Google Scholar
  3. 3.
    B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer-Science, New York, 2008.CrossRefGoogle Scholar
  4. 4.
    Silicon Semiconductor Corporation Datasheets,

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • B. Jayant Baliga
    • 1
  1. 1.Department of Electrical and Computer EngineeringNorth Carolina State UniversityRaleighUSA

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