Abstract
The first power MOSFET structure commercially introduced by the power semiconductor industry was the double-diffused or D-MOSFET structure. The channel length of this device could be reduced to sub-micron dimensions by controlling the diffusion depths of the P-base and N+ source regions without resorting to expensive lithography tools [1]. The device fabrication process relied up on the available planar gate technology used to manufacture CMOS integrated circuits. These devices found applications in power electronic circuits that operated at low (<100 V) voltages. The fast switching speed and ruggedness of the D-MOSFET structure were significant advantages compared with the performance of the available bipolar power transistor.
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References
B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer-Science, New York, 2008.
S.C. Sun and J.D. Plummer, “Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors”, IEEE Transactions on Electron Devices, Vol. ED-27, pp. 356–367, 1980.
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Baliga, B.J. (2010). D-MOSFET Structure. In: Advanced Power MOSFET Concepts. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-5917-1_2
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DOI: https://doi.org/10.1007/978-1-4419-5917-1_2
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