• B. Jayant Baliga


Power devices are required for applications that operate over a broad spectrum of power levels as shown in Fig. 1.1 [1]. Based up on this figure, the applications can be broken down into several categories. The first category is applications that require low operating current (typically less than 1 A) levels. These applications, such as display drives, usually require a large number of transistors that must be capable of blocking up to 300 V. The small size of the low-current transistors allows their integration on a single chip with control circuits to provide a cost-effective solution.


Doping Concentration Breakdown Voltage Drift Region Silicon Device Optimum Charge 


  1. 1.
    B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer Science, New York, 2008.CrossRefGoogle Scholar
  2. 2.
    B.J. Baliga, “Silicon Carbide Power Devices”, World Scientific Press, Singapore, 2005.Google Scholar
  3. 3.
    B.J. Baliga, “Silicon RF Power Devices”, World Scientific Press, Singapore, 2005.CrossRefGoogle Scholar
  4. 4.
    B.J. Baliga, “Modern Power Devices”, Wiley, New York, 1987.Google Scholar
  5. 5.
    B.J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982.CrossRefGoogle Scholar
  6. 6.
    B.J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985.CrossRefGoogle Scholar
  7. 7.
    M. Bhatnagar, P.M. McLarty, and B.J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992.CrossRefGoogle Scholar
  8. 8.
    W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967.CrossRefGoogle Scholar
  9. 9.
    R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol. 13, pp. 583–608, 1970.CrossRefGoogle Scholar
  10. 10.
    N. Mohan, T.M. Undeland, and W.P. Robbins, “Power Electronics”, pp. 164–172, Wiley, New York, 1995.Google Scholar
  11. 11.
    J.D. van Wyk, “Power Electronic Converters for Drives”, pp. 81–137, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, New Jersey, 1997.Google Scholar
  12. 12.
    J. Holtz, “Pulse Width Modulation for Electronic Power Conversion”, pp. 138–208, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, 1997.Google Scholar
  13. 13.
    B.J. Baliga, “Advanced Power Rectifier Concepts”, Springer-Science, New York, 2009.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • B. Jayant Baliga
    • 1
  1. 1.Department of Electrical and Computer EngineeringNorth Carolina State UniversityRaleighUSA

Personalised recommendations