Abstract
Polarization doping related to the piezoelectric and spontaneous polarization induced electric fields in nitride-based (III-N) semiconductors and large conduction and valence band discontinuities at the heterointerfaces in these materials enable extremely high sheet carrier densities in device channels. As a consequence, insulated gate III-N field effect transistors are quite tolerant of the interface states at semiconductor-dielectric interfaces. High breakdown fields of III-N materials allow achieving high power operation, and superior transport properties of nitride semiconductors make them suitable for high frequency operation. We describe materials growth, deposition and fabrication technology, device characteristics, reliability, and applications of insulated gate III-N field effect transistors and discuss future trends in this technology development.
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References
Levinshtein M E, Rumyantsev S L, Shur M S, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe, John Wiley and Sons, New York (2001)
Bykhovski A, Gelmont B, Shur M S, J. Appl. Phys., 74(11), 6734 (1993)
Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A, Stutzmann M, J. Appl. Phys., 87, 334 (2000)
Gaska R, Yang J W, Osinsky A, Chen Q, Khan M A, Orlov A O, Snider G L, Shur M S, Appl. Phys. Lett., 72(6), 707 (1998)
Frayssinet E, Knap W, Lorenzini P, Grandjean N, Massies J, Skierbiszewski C, Suski T, Grzegory I, Porowski S, Simin G, Hu X, Khan M A, Shur M S, Gaska R, Maude D, Appl. Phys. Lett., 77(16), 2551 (2000)
O’Leary S K, Foutz B E, Shur M S, Eastman L F, J. Mater. Sci.: Mater. Electron., 17, 87 (2006)
O’Leary S K, Foutz B E, Shur M S, Eastman L F, Appl. Phys. Lett., 88, 152113 (2006)
Dyakonova N V, Dickens A, Shur M S, Gaska R, Yang J W, Appl. Phys. Lett., 72(20), 2562 (1998)
Liu W, Balandin A A, Lee C, Lee H Y, Phys. Stat. Sol. A, 202(12), R135 (2005)
McIntosh F G, Boutros K S, Roberts J C, Bedair S M, Piner E L, El-Masry N A, Appl. Phys. Lett., 68, 40 (1996)
Chitnis A, Kumar A, Shatalov M, Adiravahan V, Lunev A, Yang J W, Simin G, Khan M A, Gaska R, Shur M S, Appl. Phys. Lett., 77(23), 3800 (2000)
Khan M A, Gaska R, Shur M S, Yang J, Method of producing nitride-based heterostructure devices, Patent number: 6764888 (2004)
Khan M A, Chen Q, Sun C J, Shur M S, Gelmont B L, Appl. Phys. Lett., 67(10), 1429 (1995)
Binari S C, Rowland L B, Kelner G, Kruppa W, Dietrich H B, Doverspike K, Gaskill D K, Int. Symp. Compd. Semicond., San Diego (1994)
Khan M A, Chen Q, Sun C J, Yang J W, Blasingame M, Shur M S, Park H, Appl. Phys. Lett., 68(4), 514 (1996)
Hu X, Simin G, Yang J, Khan M A, Shur M S, Gaska R, Electron. Lett., 36(8), 753 (2000)
Gaska R, Khan M A, Hu X, Simin G, Yang J, Deng J, Rumyantsev S, Shur M S, Device research conference, 2000 Conference Digest, 43–44, Denver, CO, USA (2000)
Simin G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Khan M A, Gaska R, Shur M S, Electron. Lett., 36, 2043 (2000)
Khan M A, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur M S, Appl. Phys. Lett., 77(9), 1339 (2000)
Pala N, Gaska R, Rumyantsev S, Shur M S, Khan M A, Hu X, Simin G, Yang J, Electron. Lett., 36(3), 268 (2000)
Pala N, Gaska R, Shur M S, Yang J, Khan M A, Mat. Res. Soc. Proc, 595, W11.9.1 (2000)
Simin G, Shur M, Khan M A, Gaska R, Int. J. High Speed Electron Syst., 14(N1), 197 (2004)
Khan M A, Gaska R, Shur M S, Yang J, Metal oxide semiconductor heterostructure field effect transistor, US Patent 6,690,042 B2 (2004)
Khan M A, Gaska R, Shur M S, Yang J, Metal oxide semiconductor heterostructure field effect transistor, US Patent 6,878,593 (April 2005)
Khan M A, Gaska R, Shur M S, Yang J, Nitride based heterostructure devices, Patent 7,348,606 (2008)
Huang W, Khan T, Chow T P, J. Electron. Mat., 35(4), 726 (2006)
Matocha K, Chow T P, Gutmann R J, IEEE Electron Device Lett., 23(2), 79 (2002)
Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J, Ren F, Gila B P, Onstine A H, Abernathy C R, Pearton S J, Pan C C, Chen G T, Chyi J I, Appl. Phys. Lett., 84(15), 2919 (2004)
Matocha K, Chow T P, Gutmann R J, IEEE Trans. Electron Devices, 52(1), 6 (2005)
Jang S, Ren F, Pearton S J, Gila B P, Hlad M, Abernathy C R, Yang H, Pan C J, Chyi J I, Bove P, Lahreche H, Thuret J, J. Electron. Mater., 35(4), 685 (2006)
Lee H B, Cho H I, An H S, Bae Y H, Lee M B, Lee J H, Hahm S H, IEEE Electron Device Lett., 27(2), 81 (2006)
Huang W, Khan T, Chow T P, IEEE Electron Device Lett., 27, 796 (2006)
Huang W, Chow T P, Khan T, Phys. Stat. Sol. A, 204(6), 2064 (2007)
Kambayashi H, Niiyama Y, Ootomo S, Nomura T, Iwami M, Satoh Y, Kato S, Yoshida S, IEEE Electron Device Lett., 28(12), 1077 (2007)
Chow T P, Naik H, Li Z, Phys. Stat. Sol. A, 1, doi: 10.1002 (2009)
Tokranov V, Rumyantsev S L, Shur M S, Gaska R, Oktyabrsky S, Jain R, Pala N, Phys. Stat. Sol. (RRL), 1(5), 199 (2007)
Morkoç H, J. Mater. Sci.: Mater. Elect., 12(12), 677 (2001)
Pei Y, Poblenz C, Cordon A L, Chu R, Shen L, Speck J S, Mishra U K, Electron Lett., 44(9), 598 (2008)
Fareed Q, Gaska R, Shur M S, Methods of growing Nitride-based film using varying pulses, US Patent 7192849 (2007)
Zhang J P, Kuokstis E, Fareed Q, Wang H M, Yang J W, Simin G, Khan M A, Tamulaitis G, Kurilcik G, Jursenas S, Zukauskas A, Gaska R, Shur M, Phys. Stat. Sol. A, 188, 95 (2001)
Kazlauskas K, Žukauskas A, Tamulaitis G, Mickevičius J, Shur M S, Fareed R S Q, Zhang J P, Gaska R, Appl. Phys. Lett., 87, 172102 (2005)
Khan M A, Yang J W, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur M S, Beaumont B, Teisseire M, Neu G, Appl. Phys. Lett., 76(25), 3807 (2000)
Hu X, Deng J, Pala N, Gaska R, Shur M S, Chen C Q, Yang J, Simin G, Khan M A, Rojo J C, Schowalter L J, Appl. Phys. Lett., 82, 1299 (2003)
Matocha K, Chow T P, Gutmann R J, 15th Int. Symp. Power Semicond. Devices ICs, ISPSD 2003, 54 (2003)
Kambayashi H, Satoh Y, Niiyama Y, Kokawa T, Iwami M, Nomura T, Kato S, Chow T P, 21st Int. Symp. Power Semicond. Devices ICs, ISPSD 2009, 21 (2009)
Liu L, Edgar J H, Mater. Sci. Eng. R, 37, 61 (2002)
Sheppard S T, Smith R P, Pribble W L, Ring Z, Smith T, Allen S T, Milligan J, Palmour J W, Dev. Res. Conf., Cat. No. 02TH8606, 175 (2002)
Rajagopal P, Roberts J C, Cook J W, Jr., Brown J D, Piner E L, Linthicum K J, Mater. Res. Soc. Symp. Proc., 798, Y7.2.1 (2003)
Johnson J W, Piner E L, Vescan A, Therrien R, Rajagopal P, Roberts J C, Brown J D, Singhal S, Linthicum K J, IEEE Electron Device Lett., 25, 459 (2004)
Khan M A, Simin Shur M S, Gaska R, Electronic device based on group III Nitrides. In: Buschow K H J, Cahn R W, Flemings M C, Ilschner B, Kramer E J, Mahajan S (eds) Encyclopedia of Materials: Science and Technology, 3, 2616 (2008)
Wetzel C, Suski T, Ager JW, III, Weber E R, Haller E E, Fisher S, Meyer B K, Molnar R J, Perlin P, Phys. Rev. Lett., 78, 3923 (1997)
Hubbard S M, Zhao G, Pavlidis D, Sutton W, Cho E, Mater. Res. Soc. Symp. Proc., 831, E11.11.1 (2004)
Haffouz S, Tang H, Bardwell J A, Hsu E M, Webb J B, Rolfe S, Solid-State Electron, 49(5), 802 (2005)
Iliopoulos E, Zervos M, Adikimenakis A, Tsagaraki K, Georgakilas A, Superlattices Microstruct., 40(4–6), 313 (2006)
Gu X, Izyumskaya N, Avrutin V, Xie J, Chevtchenko S, Xiao B, Morkoç H, Proc. SPIE, 6473, 64730S (2007)
Wu H M, Peng L H, Phys. Stat. Sol. C, 3(6), 2291 (2006)
Ren F, Hong M, Chu S N G, Marcus M A, Schurman M J, Baca A, Pearton S J, Abernathy C R, Appl. Phys. Lett., 73, 3893 (1998)
Wu Y Q, Ye P D, Wilk G D, Yang B, Mater. Sci. Eng. B, 135, 282 (2006)
Liu C, Chor E F, Tan L S, Appl. Phys. Lett., 88, 173504 (2006)
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G, IEEE Electron Device Lett., 30(5), 433 (2009)
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M S, Gaska R, Simin G, IEEE Electron Device Lett., 30, 478 (2009)
Littlejohn M A, Hauser J R, Glisson T H, Appl. Phys. Lett., 26, 625 (1975)
Gelmont B, Kim K, Shur M, J. Appl. Phys., 74, 1818 (1993)
Mansour N S, Kim K W, Littlejohn M A, J. Appl. Phys., 77, 2834 (1995)
KolnıK J, Oguzman I H, Brennan K F, Wang R, Ruden P P, Wang Y, J. Appl. Phys., 78, 1033 (1995)
Foutz B E, Eastman L F, Bhapkar U V, Shur M S, Appl. Phys. Lett., 70, 2849 (1997)
Bhapkar U V, Shur M S, J. Appl. Phys., 82, 1649 (1997)
Albrecht J D, Wang R P, Ruden P P, Farahmand M, Brennan K F, J. Appl. Phys., 83, 4777 (1998)
Foutz B E, O’Leary S K, Shur M S, Eastman L F, J. Appl. Phys., 85, 7727 (1999)
O’Leary S K, Foutz B E, Shur M S, Eastman L F, J. Electron Mater., 32, 327 (2003)
O’Leary S K, Foutz B E, Shur M S, Bhapkar U V, Eastman L F, Solid State Commun., 105, 621 (1998)
Albrecht J D, Wang R P, Ruden P P, Farahmand M, Brennan K F, J. Appl. Phys., 83, 1446 (1998)
O’Leary S K, Foutz B E, Shur M S, Bhapkar U V, Eastman L F, J. Appl. Phys., 83, 826 (1998)
Bellotti E, Doshi B K, Brennan K F, Albrecht J D, Ruden P P., J. Appl. Phys., 85, 916 (1999)
Vasconcelos T F, Maia F F, Jr., Caetano E W S, Freire V N, da Costa J A P, da Silva E F, Jr., J. Cryst. Growth, 246, 320 (2002)
O’Leary S K, Foutz B E, Shur M S, Eastman L F, J. Mater. Sci. Mater. Electron, doi: 10.1007/s10854-009-9896-1 (2009)
Oberhuber R, Zandler G, Vogl P, Appl. Phys. Lett., 73, 818 (1998)
Krishnan M S, Goldsman N, Christou A, J. Appl. Phys., 83, 5896 (1998)
Heying B, Smorchkova I, Poblenz C, Elsass C, Fini P, DenBaars S, Mishra U, Speck J S, Appl. Phys. Lett., 77, 2885 (2000)
Saxler A, Look D C, Elhamri S, Sizelove J, Cull D, Mitchel W C, Callahan M, Bliss D, Bouthillette L, Wang S Q, Sung C M, Lee K Y, GaN and Related Alloys, Mater. Res. Soc. Symp. Proc., 639 (2000)
Look D C, Sizelove J R, Appl. Phys. Lett., 79, 1133 (2001)
Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J, J. Appl. Phys., 85, 3222 (1999)
Bernardini F, Fiorentini V, Vanderbilt D, Phys. Rev. B., 56, R10024 (1997)
Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K, J. Appl. Phys., 86, 4520 (1999)
Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, J. Appl. Phys., 90, 5196 (2001)
Shur M S, Bykhovski A D, Gaska R, Solid-State Electron, 44, 205 (2000)
Liberis J, Matilioniene I, Matulionis A, Sermunksnis E, Xie J, Leach J H, Morkoc H, Phys. Stat. Sol. A, 206, 1385 (2009)
Gaska R, Shur M S, Bykhovski A D, Orlov A O, Snider G L, Appl. Phys. Lett., 74(2), 287 (1999)
Aggerstam T, Lourdudoss S, Radamson H H, Sjödin M, Lorenzini P, Look D C, Thin Solid Films, 515, 705 (2006)
Ivanov P A, Levinshtein M E, Simin G, Hu X, Yang J, Khan M A, Rumyantsev S L, Shur M S, Gaska R, Electron. Lett., 37(24), 1479 (2001)
Huang W, Chow T P, Niiyama Y, Nomura T, Yoshida S, 21st Int. Symp. Power Semicond. Devices IC's, ISPSD 2009. 29 (2009)
Binari S C, Dietrich H B, Kruppa W, Kelner G, Saks N S, Edwards A, Redwing J M, Wickenden A E, Koleske D D, Proc. 2nd Int. Conf. Nitride Semicond. (ICNS 97), 476 (1997)
Ochiai M, Akita M, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Jpn. J. Appl. Phys., 42, 2278 (2003)
Ye P D, Yang B, Ng K K, Bude J, Wilk G D, Halder S, Hwang J C M, Appl. Phys. Lett., 86, 063501 (2005)
Mehandru R, Luo B, Kim J, Ren F, Gila B P, Onstine A H, Abernathy C R, Pearton S J, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Appl. Phys. Lett., 82, 2530 (2003)
Rai S, Adivarahan V, Huang P, Tipirneni N, Husna F, Simin G, Yang J W, Khan M A, Jpn. J. Appl. Phys., 45(6A), 4985 (2006)
Khan M A, Shur M S, Chen Q C, Kuznia J N, Electron. Lett., 30(25), 2175 (1994)
Cho D, Shimizu M, Ide T, Ookita H, Okumura H, Jpn. J. Appl. Phys. V., 41, 4481 (2002)
Mohammed F M, Wang L, Koo H J, Adesida I, J. Appl. Phys., 101, 033708 (2007)
Das J, Oprins H, Ji H, Sarua A, Ruythooren W, Derluyn J, Kuball M, Germain M, Borghs G, IEEE Trans. Electron Devices, 53(11), 2696 (2006)
Binari S C, Rowland L B, Kelner G, Kruppe W, Dietrich H B, Doverspike K, Gaskill D K, Int. Symp. Compound Semicond., Bristol, UK: IOP, 459 (1995)
Koudymov A, Fatima H, Simin G, Yang J, Khan M A, Tarakji A, Hu X, Shur M S, Gaska R, Appl. Phys. Lett., 80, 3216 (2002)
Shur M S, GaAs Devices and Circuits, Plenum Press, New York and London (1987)
Clarke F W, Ho F D, Khan M A, Simin G, Yang J, Gaska R, Shur M S, Deng J, Karmalkar S, Mat. Res. Symp. Proc., 743, L 9.10 (2002)
Karmalkar S, Sathaiya D M, Shur M S, Appl. Phys. Lett., 82, 3976–3978 (2003)
Simin G, Tarakji A, Hu X, Koudymov A, Yang J, Khan M A, Shur M S, Gaska R, Phys. Stat. Sol. A, 188(1), 219 (2001)
Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan M A, Shur M S, Gaska R, Solid-State Electron, 46(8), 1211 (2002)
Simin G, Hu X, Ilinskaya N, Zhang J, Tarakji A, Kumar A, Khan M A, Gaska R, Shur M S, IEEE Electron Device Lett., 22(2), 53 (2001)
Copeland J A, IEEE Trans. Electron Devices, 18, 50 (1971)
Levinshtein M E, Rumyantsev S L, Semicond. Sci. Tech., 9(6), 1183 (1994)
Rumyantsev S L, Pala N, Shur M S, Borovitskaya E, Dmitriev A P, Levinshtein M E, Gaska R, Khan M A, Yang J, Hu X, Simin G, IEEE Trans. Electron Devices, 48(3), 530 (2001)
Pala N, Rumyantsev S, Shur M S, Gaska R, Hu X, Yang J, Simin G, Khan M A, Fluct. Noise Lett., 2(4), L349 (2002)
Rumyantsev S L, Pala N, Shur M S, Levinshtein M E, Gaska R, Khan M A, Simin G, Generation—Recombination noise in GaN-based devices. In: Shur M S, Davis R F (ed), GaN-Based Materials and Devices, Selected Topics in Electronics and Systems, World Scientific, 33 (2004)
Levinshtein M E, Balandin A A, Rumyantsev S L, Shur M S, Low-frequency noise in GaN-based field effect transistors. In: Balandin A A (ed), Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers (2002)
Surya C, Fong W K, Leung B H, Material processing and low frequency noise in GaN thin films and devices. In: Balandin A A (ed), Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers (2002)
Levinshtein M E, Rumyantsev S L, Shur M S, Gaska R, Khan M A, Spec. Issue IEE Proc. Circuits Devices Syst., 149(1), 32 (2002)
Rumyantsev S L, Pala N, Shur M S, Gaska R, Levinshtein M E, Khan M A, Simin G, Hu X, Yang J, J. Appl. Phys., 88(11), 6726 (2000)
McWhorter A L, Proc. Conf. Phys. Semicond. Surf., Philadelphia, 207 (1956)
Christensson S, Lundstrom I, Svensson C, Solid-State Electron., 11, 797 (1968)
Morshed T H, Devireddy S P, Celik-Butler Z, Shanware A, Green K, Chambers J J, Visokay M R, Colombo L, Solid-State Electron., 52, 711 (2008)
Rumyantsev S, Young C, Bersuker G, Shur M, 20th Int. Conf. Noise Fluct., ICNF 2009, Pisa, Italy, AIP Conf. Proc., 1129, 255 (2009)
Chiou Y Z, Su Y K, Gong J, Chang S J, Wang C K, Jpn. J. Appl. Phys. V., 45(4B), 3405 (2006)
Rumyantsev S L, Pala N, Shur M S, Gaska R, Levinshtein M E, Khan M A, Simin G, Hu X, Yang J, J. Appl. Phys., 90(1), 310 (2001)
Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Khan M A, Shur M S, Gaska R, Appl. Phys. Lett., 79, 2651 (2001)
Pala N, Rumyantsev S L, Shur M S, Hu X, Tarakji A, Gaska R, Khan M A, Simin G, Yang J, Solid State Electron., 46, 711 (2002)
Vetury R, Zhang N Q, Keller S, Mishra U K, IEEE Trans. Electron Devices, 48, 560 (2001)
Binari S C, Klein P, Kazior T, Proc. IEEE, 90, 1048 (2002)
Green B M, Chu K K, Chumbes E M, Smart J A, Shealy J R, Eastman L F, IEEE Electron Device Lett., 21, 268 (2000)
Arulkumaran S, Egawa T, Ishikawa H, Jimbo T, Sano Y, Appl. Phys. Lett., 84, 613 (2004)
Braga N, Mickevicius R, Rao V, Fichtner W, 16th Biennial University Government Industry Microelectronics Symposium, San Jose, CA (2006)
Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T, Kuzuhara M, IEEE Electron Device Lett., 24, 289 (2003)
Karmalkar S, Shur M S, Simin G, Khan M A, IEEE Trans. Electron Devices, 52, 2534 (2005)
Koudymov A, Wang C X, Adivarahan V, Yang J, Simin G, Khan M A, IEEE Electron Device Lett., 28, 5 (2007)
Koudymov A, Shur M, Int. J. High Speed Electron. Syst., 18(4), 935 (2008)
Adivarahan V, Yang J, Koudymov A, Simin G, Khan M A, IEEE Electron Device Lett., 26(8), 535 (2005)
Saygi S, Fatima H, He X, Rai S, Koudymov A, Adivarahan V, Yang J, Simin G, Khan M A, Phys. Stat. Sol. (c), 2(7), 2651 (2005)
Kanamura M, Kikkawa T, Iwai T, Imanishi K, Kubo T, Joshin K, Electron Devices Meeting, 2005, IEDM Tech. Dig., 5, 572 (2005)
Mishra U, Shen L, Kazior T E, Wu Y F, Proc. IEEE, 96, 287 (2008)
Simin G, Adivarahan V, Yang J, Koudymov A, Rai S, Khan M A, Electron Lett., 41(13), 774 (2005)
Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K, Parikh P, IEEE Electron Device Lett., 25, 117 (2004)
Cripps S C, Advanced Techniques in RF Power Amplifier Design, Artech House, Boston/London (2002)
Gaska R, Yang J, Osinsky A, Khan M A, Shur M S, IEDM-97 Tech. Dig., 565 (1997)
Saito W, Domon T, Omura I, Kuraguchi M, Takada Y, Tsuda K, Yamaguchi M, IEEE Electron Device Lett., 27, 326 (2006)
Koudymov A, Shur M, Two-stage amplification using intermediate non-linear square wave, US Patent 7,560,985 (2009)
Braga N, Mickevicius R, Fichtner W, Gaska R, Shur M S, 2005 IEEE CSICS Tech. Dig., Palm Springs, CA, 149 (2005)
Nakajima A, Itagaki K, Horio K, IEEE International Reliability Physics Symposium, 722 (2009)
Simin G, Khan M A, Shur M S, Gaska R, Int. J. High Speed Electron Syst., 16(N2), 455 (2006)
Yang Z, Wang J, Hu X, Yang J, Simin G, Shur M, Gaska R, IEEE Electron Device Lett., 29, 15 (2008)
Simin G, Yang Z J, Koudymov A, Adivarahan V, Yang J, Khan M A, Appl. Phys. Lett., 89, 033510 (2006)
Simin G, Yang G, Shur M, IEEE/MTT-S Int. Microwave Symp., 457 (2007)
Hu X, Gaevski M, Khan B, Wang J, Gaska R, Simin G, Koudymov A, Jain R, Yang J, Shur M, IEEE Electron Device Lett., 30(9), 895 (2009)
Simin G, Wang J, Koudymov A, Sattu A, Yang J, Shur M, Gaska R, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2009, Málaga (Spain), Extended Abstract Book, Sect. Monday 5, 10 (2009)
Huang W, Chow T P, Niiyama Y, Nomura T, Yoshida S, 20th Int. Symp. Power Semicond. Devices IC's, ISPSD 2008, 291 (2008)
Zhang N Q, Moran B, DenBaars S P, Mishra U K, Wang X W, Ma T P, Phys. Stat. Sol. A, 188(1), 213 (2001)
Pytel S G, Lentijo S, Rai S, Fatima H, Adivarahan V, Chitnis A, Yang J, Hudgins J L, Santi E, Monti A, Simin G, Khan M A, Power Electron. Spec. Conf. 2004 IEEE 35th Annual, 1, 579 (2004)
Saito W, Kuraguchi M, Takada Y, Tsuda K, Omura I, Ogura T, IEEE Trans. Electron Devices, 51, 1913 (2004)
Huang W, Chow T P, Proc. 19th Int. Symp. Power Semicond. Devices ICs, 265 (2007)
Huang W, Li Z, Chow T P, Niiyama Y, Nomura T, Yoshida S, 20th Int. Symp. Power Semicond. Devices IC's, ISPSD 2008, 295 (2008)
Ryzhii V, Shur M S, ISDRS Digest, Washington DC, WP7-07-10, 200 (2003)
Deng Y, Kersting R, Xu J, Ascazubi R, Zhang X C, Shur M S, Gaska R, Simin G S, Khan M A, Ryzhii V, Appl. Phys. Lett., 84(15), 70 (2004)
Dyakonova N, Fatimy A E, Lusakowski J, Knap W, Dyakonov M I, Poisson M A, Morvan E, Bollaert S, Shchepetov A, Roelens Y, Gaquiere Ch, Theron D, Cappy A, Appl. Phys. Lett., 88(14), 141906 (2006)
Fatimy A E, Tombet S B, Teppe F, Knap W, Veksler D B, Rumyantsev S, Shur M.S, Pala N, Gaska R, Fareed Q, Hu X, Seliuta D, Valusis G, Gaquiere C, Theron D, Cappy A, Electron. Lett., 42(23), 1342 (2006)
Turin V O, Shur M S, Veksler D B, Int. J. High Speed Electron. Syst., 17(1), 19 (2007)
Pala N, Yang J Z, Koudymov A, Hu X, Deng J, Gaska R, Simin G, Shur M S, Device Research Conference, 2007 65th Annual, 43 (2007)
Simin G, Shur M, Gaska R, Int. J High Speed Electron Syst., 19(1), 7 (2009)
Chandrashekhar M V S, Thomas C I, Lu J, Spencer M G, Appl. Phys. Lett., 91, 033503 (2007)
O’Leary S K, Foutz B E, Shur M S, Eastman L F, Appl. Phys. Lett., (2009, Submitted)
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Shur, M., Simin, G., Rumyantsev, S., Jain, R., Gaska, R. (2010). Insulated Gate Nitride-Based Field Effect Transistors. In: Oktyabrsky, S., Ye, P. (eds) Fundamentals of III-V Semiconductor MOSFETs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1547-4_13
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Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-1546-7
Online ISBN: 978-1-4419-1547-4
eBook Packages: EngineeringEngineering (R0)