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Semiconductor p-n and Metal-Semiconductor Junctions

  • Manijeh Razeghi
Chapter

Abstract

Until now, our discussion was based solely on homogeneous semiconductors whose properties are uniform in space. Although a few devices can be made from such semiconductors, the majority of devices and the most important ones utilize non-homogeneous semiconductor structures. Most of them involve semiconductor p-n junctions, in which a p-type doped region and an n-type doped region are brought into contact. Such a junction actually forms an electrical diode. This is why it is usual to talk about a p-n junction as a diode.

Keywords

Reverse Bias Minority Carrier Space Charge Region Forward Bias Schottky Contact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Further reading

  1. Ashcroft, N.W. and Mermin, N.D., Solid State Physics, Holt, Rinehart and Winston, New York, 1976.Google Scholar
  2. Neudeck, G.W., The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.Google Scholar
  3. Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.Google Scholar
  4. Sapoval, B. and Hermann, C., Physics of Semiconductors, Springer-Verlag, New York, 1995.Google Scholar
  5. Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.Google Scholar
  6. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.Google Scholar
  7. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs, NJ, 1989.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • Manijeh Razeghi
    • 1
  1. 1.Walter P. Murphy Professor of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonUSA

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