Semiconductor p-n and Metal-Semiconductor Junctions

  • Manijeh Razeghi


Until now, our discussion was based solely on homogeneous semiconductors whose properties are uniform in space. Although a few devices can be made from such semiconductors, the majority of devices and the most important ones utilize non-homogeneous semiconductor structures. Most of them involve semiconductor p-n junctions, in which a p-type doped region and an n-type doped region are brought into contact. Such a junction actually forms an electrical diode. This is why it is usual to talk about a p-n junction as a diode.


Reverse Bias Minority Carrier Space Charge Region Forward Bias Schottky Contact 
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Further reading

  1. Ashcroft, N.W. and Mermin, N.D., Solid State Physics, Holt, Rinehart and Winston, New York, 1976.Google Scholar
  2. Neudeck, G.W., The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.Google Scholar
  3. Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.Google Scholar
  4. Sapoval, B. and Hermann, C., Physics of Semiconductors, Springer-Verlag, New York, 1995.Google Scholar
  5. Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.Google Scholar
  6. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.Google Scholar
  7. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs, NJ, 1989.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • Manijeh Razeghi
    • 1
  1. 1.Walter P. Murphy Professor of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonUSA

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