Abstract
In the previous Chapter, we have reviewed the various techniques used to synthesize semiconductor crystals and thin films. This represented only the first step in the fabrication of semiconductor devices. Several additional steps are necessary before a final product can be obtained, which will be described in this and the following Chapter.
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References
Jaeger, R.C., Introduction to Microelectronic Fabrication, 2nd Edition, Prentice-Hall, Upper Saddle River, NJ, 2002.
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Further reading
Campbell, S.A., The Science and Engineering of Microelectronic Fabrication, Oxford University Press, New York, 1996.
Diaz, J.E., Fabrication of High Power Aluminum-Free 0.8 μm to 1.0 μm InGaP/InGaAsP/GaAs Lasers for Optical Pumping, Ph.D. dissertation, Northwestern University, 1997.
Fogiel, M., Microelectronics-Principle, Design Techniques, and Fabrication Processes, Research and Education Association, New York, 1968.
Ghandi, S., VLSI Fabrication Principles, John Wiley & Sons, New York, 1983.
Soclof, S., Design and Application of Analog Integrated Circuits, Prentice-Hall, Englewood Cliffs, NJ, pp. 8-23, 1991.
Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, pp. 65-70, 1980.
Trumbore, F.A., “Solid solubilities of impurity elements in germanium and silicon,” Bell System Technical Journal 39, pp. 205-233, 1960.
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Razeghi, M. (2010). Semiconductor Device Technology. In: Technology of Quantum Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1056-1_2
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DOI: https://doi.org/10.1007/978-1-4419-1056-1_2
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