Abstract
This chapter aims to provide readers with a general concept of how materials are prepared in semiconductor research and industry. High quality materials are vital to producing high quality devices. In addition, however, technologies are also in the race for cost-effective mass production with the considerations of wafer size expansion, multiple-wafer growth and compatibility with currently existing integrated circuitry.
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References
Belousov, M., Volf, B., Ramer, J.C., Armour, E.A., and Gurary, A., “In situ metrology advances in MOCVD growth of GaN-based materials,” Journal of Crystal Growth 272, pp. 94-99, 2004.
Cheung, J.T., “Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy,” Applied Physics Letters 51(23), pp. 1940-1942, 1987.
Elliot, A.G., Flat, A., and Vanderwater, D.A., “Silicon incorporation in LEC growth of single crystal gallium arsenide,” Journal of Crystal Growth 121(3), pp. 349-359, 1992.
Gao, Y.Z., Kan, H., Gao, F.S., Gong, X.Y., and Yamaguchi, T., “Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats,” Journal of Crystal Growth 234(1), pp. 85-90, 2002.
Gao, Y.Z., Gong, X.Y., Gui, Y.S., Yamaguchi, T., and Dai, N., “Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm,” Japanese Journal of Applied Physics 43(3), pp. 1051, 2004.
Gevorkyan, V.A., “A new liquid-source version of liquid phase electroepitaxy,” Journal of Crystal Growth 249(1-2), pp. 149-158, 2003.
Golubev, L.V., Egorov, A.V., Novikov, S.V., and Shmartsev, Y.V., “Liquid phase electroepitaxy of III-V semiconductors,” Journal of Crystal Growth 146(1-4), pp. 277-282, 1995.
Henini, M., and Razeghi, M., Handbook of infra-red detection technologies Elsevier Science Ltd., 2002.
Juergensen, H., “MOCVD technology in research, development and mass production,” Materials Science in Semiconductor Processing 4(6), pp. 467-474, 2001.
Kasap, S., and Capper, P., Springer Handbook of Electronic and Photonic Materials, Springer-Verlag, New York, Inc., pp. 285, 2007.
Kohiro, K., Ohta, M., and Oda, O., “Growth of long-length 3 inch diameter Fedoped InP single crystals,” Journal of Crystal Growth 158(3), pp. 197-204, 1996.
Meyer, M., “The Compound Semiconductor Industry in the 1990 s,” Compound Semiconductors 5, pp. 9, 1999.
Monroy, E., Guillot, F., Leconte, S., Bellet-Amalric, E., Baumann, E., Giorgetta, F.R., and Hofstetter, D., “Plasma-assisted MBE growth of nitride-based intersubband detectors,” AIP Conference Proceedings 893(1), pp. 481-482, 2007.
Neubert, M., and Rudolph, P., “Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz),” Progress in Crystal Growth and Characterization of Materials 43(2-3), pp. 119-185, 2001.
Neubert, M., Rudolph, P., Frank-Rotsch, C., Czupalla, M., Trompa, K., Pietsch, M., Jurisch, M., Eichler, S., Weinert, B., and Scheffer-Czygan, M., “Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique,” Journal of Crystal Growth 310(7-9), pp. 2120-2125, 2008.
Pätzold, O., Wunderwald, U., Bellmann, M., Gumprich, P. Buhrig, E., Cröll, A., ”New Developments in Vertical Gradient Freeze Growth,” Advanced Engineering Materials 6(7), pp. 554-557, 2004.
Panish, M.B., “Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P,” Journal of The Electrochemical Society 127(12), pp. 2729-2733, 1980.
Razeghi, M., The MOCVD Challenge Volume 1: A Survey of GaInAsP-InP for Photonic and Electronic Applications, Adam Hilger, Bristol, UK, pp. 188-193, 1989.
Razeghi, M., “High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system,” Proceedings of the SPIE 7230, p. 723011, 2009.
Rudolph, P., and Jurisch, M., “Bulk growth of GaAs An overview,” Journal of Crystal Growth 198-199(Part 1), pp. 325-335, 1999.
Thompson, A.G., “MOCVD technology for semiconductors,” Materials Letters 30(4), pp. 255-263, 1997.
Tokumitsu, E., Kudou, Y., Konagai, M., and Takahashi, K., “Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source,” Journal of Applied Physics 55(8), pp. 3163-3165, 1984.
Tsang, W.T., Logan, R.A., Olsson, N.A., Johnson, L.F., and Henry, C.H., “Heteroepitaxial ridge-overgrown distributed feedback laser at 1.5 μm,” Applied Physics Letters 45(12), pp. 1272-1274, 1984.
Further reading
Kasap, S., and Capper, P., Springer Handbook of Electronic and Photonic Materials, Springer-Verlag, New York, Inc., 2007.
Razeghi, M., The MOCVD Challenge Volume 1: A Survey of GaInAsP-InP for Photonic and Electronic Applications, Adam Hilger, Bristol, UK, 1989.
Razeghi, M., The MOCVD Challenge Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications, Institute of Physics, Bristol, UK, 1995.
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Razeghi, M. (2010). Single Crystal Growth. In: Technology of Quantum Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1056-1_1
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