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Memristors: A New Nanoscale CNN Cell

  • Leon Chua
Chapter

Abstract

The circuit-theoretic foundation of the memristor and its generalizations to a lossless memory capacitor and a lossless memory inductor is presented along with the devices’ constitutive relations. Their identifying fingerprints consist of a pinched hysteresis loop when plotted in the voltage versus current plane, voltage versus charge plane, and current versus flux plane, respectively. All three devices are nonlinear and their underlying physical mechanisms are expected to dominate and manifest their memory character as the device size scales below 20 nm, when electrons and ions are coupled strongly under intense electric and/or magnetic fields. While all three devices are ideal candidates for nonvolatile nano memories, their long-term significance lies in their enabling potentials for designing nano CNNs, and intelligent machines, with learning and adaptive capabilities. Even more fundamental is their nonlinear dynamics that underpins the biological basis of life itself, where ion channels, with their complex biochemical synaptic dynamics, are essentially memristors.

Keywords

Constitutive Relation Operating Point Memory State Cellular Neural Network Circuit Element 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.University of CaliforniaBerkeleyUSA

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