Analytical Determination of Radiation-induced Pulse Width in Combinational Circuits
In this chapter, an approach is developed to analyze the effect of radiation-induced transients in combinational circuits. Efficient and accurate models for radiation-induced transients are required to evaluate the radiation tolerance of a circuit. A radiation particle strikes at a node may result in a voltage glitch. The pulse width of this voltage glitch is a good measure of radiation robustness of a design. Thus, an analytical model to estimate the pulse width of the radiation-induced voltage glitch in combinational designs is presented in this chapter. In this approach, a piecewise linear transistor I DS model is used, and the effect of the ion track establishment constant (τβ) of the radiation-induced current pulse is considered. Both these factors improve the accuracy (in comparison with the previous approaches) of the analytical model for the pulse width computation. The model is applicable to any logic gate, with arbitrary gate size and loading, and with different amounts of charge collected due to the radiation strike. The model can be used to quickly (1,000 ×faster than SPICE simulations) determine the susceptible gates in a design (the gates where a radiation particle strike can result in a voltage glitch with a positive pulse width). The most susceptible gates can then be protected using circuit hardening approaches, based on the degree of hardening desired.
KeywordsPulse Width PMOS Transistor Combinational Circuit Node Voltage Initial Condition Versus
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