Optical Transmitter Design

  • Mohammad Azadeh
Part of the Optical Networks book series (OPNW)

In this chapter we discuss design issues related to optical transmitters. An optical transmitter acts as the interface between the electrical and optical domains by converting electrical signals to optical signals. For digital transmitters, the optical output must conform to specifications such as optical power, extinction ratio, rise and fall time, and jitter. In analog transmitters, the optical output must faithfully regenerate the input in terms of linearity, bandwidth, phase delay, etc. It is the responsibility of the designer to ensure that the transmitter meets all the relevant requirements for the intended application of the design.


Diode Laser Optical Power Lookup Table Extinction Ratio Passive Optical Network 
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  1. [1]
    H. Stange, “Optical subassemblies,” in Handbook of Fiber Optic Data Communication , Edited by C. DeCusatis, 2nd Ed., Academic Press, New York, 2002Google Scholar
  2. [2]
    D. Kim, J. Shim, Y. C. Keh, and M. Park, “Design and fabrication of a transmitter optical subassembly (TOSA) in 10-Gb/s small-form-factor pluggable (XFP) transceiver,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 12, pp. 776–782, 2006CrossRefGoogle Scholar
  3. [3]
    M. S. Cohen et al., “Low-cost fabrication of optical subassemblies,” IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, Vol. 20, pp. 256–263, 1997CrossRefGoogle Scholar
  4. [4]
    T. Shih et al., “High-performance and low-cost 10-Gb/s bidirectional optical subassembly modules,” Journal of Lightwave Technology, Vol. 25, pp. 3488–3494, 2007CrossRefGoogle Scholar
  5. [5]
    L. Coldren and S. W Corzine, Diode Lasers and Photonic Integrated Circuits , John Wiley & Sons, New York, 1995Google Scholar
  6. [6]
    Y. Yoshida et al., “Analysis of characteristic temperature for InGaAsP BH laser with p-n-p-n blocking layers using two-dimensional device simulator ,” IEEE Journal of Quantum Electronics, Vol. 34, pp. 1257–1262, 1998CrossRefGoogle Scholar
  7. [7]
    T. Higashi, T. Yamamoto, S. Ogita, and M. Kobayashi, “Experimental analysis of characteristic temperature in quantum-well semiconductor lasers,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, pp. 513–521, 1997CrossRefGoogle Scholar
  8. [8]
    D. M. Gvozdic and A. Schlachetzki, “Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, pp. 732–735, 2003CrossRefGoogle Scholar
  9. [9]
    R. Sobiestianskas et al., “Experimental study on the intrinsic response, optical and electrical parameters of 1.55-μm DFB BH laser diodes during aging tests,” IEEE Transactions on Device and materials, Vol. 5, pp. 659–664, 2005CrossRefGoogle Scholar
  10. [10]
    J. W. Tomm et al., “Monitoring of aging properties of AlGaAs high-power laser arrays,” Journal of Applied Physics, Vol. 81, pp. 2059–2063, 1997CrossRefGoogle Scholar
  11. [11]
    L. Day-Uei et al., “A 3.8-Gb/s CMOS laser driver with automatic power control using thermistors,” IEEE International Symposium on Circuits and Systems (ISCAS), pp. 2546–2549, 2007Google Scholar
  12. [12]
    Application note, “Selecting and using thermistors for temperature control,” ILX Lightwave. Available from
  13. [13]
    W. R. Smith, “Mathematical modeling of thermal runaway in semiconductor laser operation,” Journal of Applied Physics, Vol. 87, pp. 8276–8285, 2000CrossRefGoogle Scholar
  14. [14]
    R. Schatza and C. G. Bethea, “Steady state model for facet heating leading to thermal runaway in semiconductor lasers,” Journal of Applied Physics, Vol. 76, pp. 2509–2521, 1994CrossRefGoogle Scholar
  15. [15]
    P. G. Eliseev, “Optical strength of semiconductor laser materials,” Progress in Quantum Electronics, Vol. 20, pp. 1–82, 1996CrossRefGoogle Scholar
  16. [16]
    S. Galal and B. Razavi, “10-Gb/s limiting amplifier and laser/modulator driver in 0.18-μm CMOS technology,” IEEE Journal of Solid-State Circuits, Vol. 38, pp. 2138–2146, 2003CrossRefGoogle Scholar
  17. [17]
    R. Schmid et al., “SiGe driver circuit with high output with high output amplitude operating up to 23-Gb/s,” Journal of Solid-State Circuits, Vol. 34, pp. 886–891, 1999CrossRefGoogle Scholar
  18. [18]
    J. W. Fattaruso and B. Sheahan, “A 3-V 4.25-Gb/s laser driver with 0.4-V output voltage compliance,” IEEE Journal of Solid-State Circuits, Vol. 41, pp. 1930–1937, 2006CrossRefGoogle Scholar
  19. [19]
    H. M. Rein et al., “A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10-Gb/s optical fiber links,” Journal of Solid-State Circuits, Vol. 29, pp. 1014–1021, 1994CrossRefGoogle Scholar
  20. [20]
    HFDN-18, application note, “The MAX3865 laser driver with automatic modulation control,” Maxim, 2008. Avilable from
  21. [21]
    L. Chen et al., “All-optical mm-wave generation by using direct-modulation DFB laser and external modulator,” Microwave and Optical Technology Letters, Vol. 49, pp. 1265–1267, 2007CrossRefGoogle Scholar
  22. [22]
    J. X. Ma et al., “Optical mm-wave generation by using external modulator based on optical carrier suppression,” Optics Communications, Vol. 268, pp. 51–57, 2006CrossRefGoogle Scholar
  23. [23]
    S. Hisatake et al., “Generation of flat power-envelope terahertz-wide modulation sidebands from a continuous-wave laser based on an external electro-optic phase modulator,” Optics Letters, Vol. 30, pp. 777–779, 2005CrossRefGoogle Scholar
  24. [24]
    H. Yang et al., “Measurement for waveform and chirping of optical pulses generated by directly modulated DFB laser and external EA modulator,” Optics and Laser Technology, Vol. 37, pp. 55–60, 2005Google Scholar
  25. [25]
    S. H. Park et al., “Burst-mode optical transmitter with DC-coupled burst-enable signal for 2.5-Gb/s GPON system,” Microelectronics Journal, Vol. 39, pp. 112–116, 2008CrossRefGoogle Scholar
  26. [26]
    Y. H. Oh et al., “A CMOS burst-mode optical transmitter for 1.25 Gb/s Ethernet PON applications,” IEEE Transactions on Circuits and Systems II-Express Briefs, Vol. 52, pp. 780–783, 2005CrossRefGoogle Scholar
  27. [27]
    D. Verhulst et al., “A fast and intelligent automatic power control for a GPON burst-mode optical transmitter,” IEEE Photonics Technology Letters, Vol. 17, pp. 2439–2441, 2005CrossRefGoogle Scholar
  28. [28]
    J. Bauwelinck et al., “DC-coupled burst-mode transmitter for 1.25 Gbit/s upstream PON,” Electronics Letters, Vol. 40, pp. 501–502, 2004CrossRefGoogle Scholar
  29. [29]
    B. Young, Digital Signal Integrity , Prentice Hall, Englewood Cliffs, NJ, 2001Google Scholar
  30. [30]
    H. W. Ott, Noise Reduction Techniques in Electronic Systems , 2nd Ed., Wiley, New York, 1988Google Scholar
  31. [31]
    M. I. Montrose, EMC and the Printed Circuit Board Design: Theory and Layout Made Simple , IEEE Press, Piseataway, NJ, 1998CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2009

Authors and Affiliations

  1. 1.Source Photonics, Inc.ChatsworthUSA

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