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Materials and Devices for Nanoelectronic Systems Beyond Ultimately Scaled CMOS

  • Didier Bouvet
  • László Forró
  • Adrian M. Ionescu
  • Yusuf Leblebici
  • Arnaud Magrez
  • Kirsten E. Moselund
  • Giovanni A. Salvatore
  • Nava Setter
  • Igor Stolitchnov
Chapter

Abstract

In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are examined in the next section for nonvolatile memory applications, which is a very promising direction toward future high-density memory arrays, followed by a discussion of materials for piezoelectric nanodevices in the last section.

Keywords

Electron Spin Resonance Drain Current SrTiO3 Substrate Mobility Enhancement Silicon Wire 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Didier Bouvet
    • 1
  • László Forró
    • 1
  • Adrian M. Ionescu
    • 1
  • Yusuf Leblebici
    • 1
  • Arnaud Magrez
    • 1
  • Kirsten E. Moselund
    • 1
  • Giovanni A. Salvatore
    • 1
  • Nava Setter
    • 1
  • Igor Stolitchnov
    • 1
  1. 1.Microelectronic Systems LabEPFL – Swiss Federal Institute of TechnologyLausanneSwitzerland

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