Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser
The time-resolved fluorescence spectrum of wide-gap semiconductors, single crystals of zinc oxide and gallium nitride, excited by nickel-like silver x-ray laser with the wavelength of 13.9 nm were observed. The streak image of fluorescence at around 380 nm and 370 nm for each samples were obtained by one-shot excitation of the x-ray laser. The fluorescence lifetimes were compared with the 351 nm excitation cases and evaluated the samples for scintillation materials of EUV lithography.
KeywordsFluorescence Lifetime Gallium Nitride Short Pulse Duration Streak Image Japan Atomic Energy Agency
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