Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser

  • M. Tanaka
  • Y. Furukawa
  • T. Nakazato
  • T. Tatsumi
  • H. Murakami
  • T. Shimizu
  • N. Sarukura
  • M. Nishikino
  • T. Kawachi
  • Y. Kagamitani
  • D. Ehrentraut
  • T. Fukuda
  • H. Nishimura
  • K. Mima
Part of the Springer Proceedings in Physics book series (SPPHY, volume 130)

Abstract

The time-resolved fluorescence spectrum of wide-gap semiconductors, single crystals of zinc oxide and gallium nitride, excited by nickel-like silver x-ray laser with the wavelength of 13.9 nm were observed. The streak image of fluorescence at around 380 nm and 370 nm for each samples were obtained by one-shot excitation of the x-ray laser. The fluorescence lifetimes were compared with the 351 nm excitation cases and evaluated the samples for scintillation materials of EUV lithography.

Keywords

Zinc Zirconium Platinum Coherence Nitride 

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Copyright information

© Springer 2009

Authors and Affiliations

  • M. Tanaka
  • Y. Furukawa
  • T. Nakazato
  • T. Tatsumi
  • H. Murakami
  • T. Shimizu
  • N. Sarukura
  • M. Nishikino
  • T. Kawachi
  • Y. Kagamitani
  • D. Ehrentraut
  • T. Fukuda
  • H. Nishimura
  • K. Mima

There are no affiliations available

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