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Structure And Crystallization Behaviour Of (GeTe5)100−XGaX Nanosized Thin Films For Phase-Change Applications

  • P. Ilchev
  • P. Petkov
  • D. Wamwangi
  • M. Wuttig
Conference paper
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Nanosized thin films from the (GeTe5)100−xGax system have been investigated to establish the effect of Ga addition on the structure and crystallization kinetics of GeTe5 alloys. XRD measurements and TEM images of a Ge13Te67Ga20 alloy in the as-deposited state and after annealing at 90°C and 150°C have been performed to identify the structural relaxation of the amorphous state. The crystallization proceeds after annealing the alloy at 250°C, which coincides with the phase separation of this alloy to Ga2Te3, GaTe and GaGeTe phases.

Keywords

chalcogenide glasses thin films structure phase transition phase-change materials 

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Copyright information

© Springer Science + Business Media B.V 2009

Authors and Affiliations

  1. 1.Central Laboratory of Photoprocesses “Acad. J. Malinowski”Bulgarian Academy of SciencesSofiaBulgaria
  2. 2.Department of PhysicsUniversity of Chemical Technology and MetallurgySofiaBulgaria
  3. 3.Department of Physics 1AAachen University of TechnologyAachenGermany

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