Structure And Crystallization Behaviour Of (GeTe5)100−XGaX Nanosized Thin Films For Phase-Change Applications
Nanosized thin films from the (GeTe5)100−xGax system have been investigated to establish the effect of Ga addition on the structure and crystallization kinetics of GeTe5 alloys. XRD measurements and TEM images of a Ge13Te67Ga20 alloy in the as-deposited state and after annealing at 90°C and 150°C have been performed to identify the structural relaxation of the amorphous state. The crystallization proceeds after annealing the alloy at 250°C, which coincides with the phase separation of this alloy to Ga2Te3, GaTe and GaGeTe phases.
Keywordschalcogenide glasses thin films structure phase transition phase-change materials
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