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Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography

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Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

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Summary

This paper describes a method to map dopant distributions in compound semiconductors by off-axis electron holography. A cross-sectional transmission electron microscopy (TEM) specimen with n+, n− and p gallium arsenide thin films was prepared using the micro-sampling technique of a focused ion beam and Ar+ ion milling. A phase map was obtained by off-axis phase-shifting electron holography, and the dopant distributions across a p–n junction are clearly observed. Furthermore, the low and high dopant concentration regions are remarkably distinguished with high contrast.

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Author information

Authors and Affiliations

  1. Yokohama R&D Lab, Furukawa Electric Ltd, 2-4-3 Okano, Nishi-ku, Yokohama, 220-0073, Japan

    H Sasaki, S Ootomo & T Matsuda

  2. Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, 456-8587, Japan

    K Yamamoto & T Hirayama

Authors
  1. H Sasaki
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  2. S Ootomo
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  3. T Matsuda
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  4. K Yamamoto
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  5. T Hirayama
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Sasaki, H., Ootomo, S., Matsuda, T., Yamamoto, K., Hirayama, T. (2008). Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_85

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