Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography
This paper describes a method to map dopant distributions in compound semiconductors by off-axis electron holography. A cross-sectional transmission electron microscopy (TEM) specimen with n+, n− and p gallium arsenide thin films was prepared using the micro-sampling technique of a focused ion beam and Ar+ ion milling. A phase map was obtained by off-axis phase-shifting electron holography, and the dopant distributions across a p–n junction are clearly observed. Furthermore, the low and high dopant concentration regions are remarkably distinguished with high contrast.
KeywordsPlatinum Epoxy Tungsten Milling GaAs
Unable to display preview. Download preview PDF.
- 11.Yamamoto K, Kawajiri I, Tanji T, Hibino M and Hirayama T 2000 J. Electron Microsc. 49, 31Google Scholar