InN Nanorods and Epilayers: Similarities and Differences

  • Z Liliental-Weber
  • O Kryliouk
  • H J Park
  • J Mangum
  • T Anderson
  • W Schaff
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

Transmission electron microscopy was applied to study InN nanorods grown on the a-, c- and r-plane of Al2O3, and (111) Si substrates by non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Single crystal nanorod growth was obtained on all substrates. However, the shape of the nanorods varied depending on the substrate used. For example, nanorods grown on r-plane sapphire and (111) Si have sharp tips. In contrast, growth on a- and c- planes of Al2O3 results in flat tips with clear facets on their sides. The structural quality of these nanorods and their growth polarity are compared to crystalline quality, surface roughness, defects and growth polarity of InN layers grown by MBE on the same planes of Al2O3.

Keywords

Electron Energy Loss Spectroscopy Growth Polarity Convergent Beam Electron Diffraction Convergent Beam Electron Diffraction Pattern Electron Energy Loss Spectroscopy Study 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Lu H, Schaff W J, Hwang J, Wu H et al 2000 Appl. Phys. Lett. 77, 2548CrossRefADSGoogle Scholar
  2. 2.
    Kryliouk O, Reed M, Dann T, Anderson T and Chai B 1999 Mater. Sci. Eng. B 59, 6CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • Z Liliental-Weber
    • 1
  • O Kryliouk
    • 2
  • H J Park
    • 2
  • J Mangum
    • 2
  • T Anderson
    • 2
  • W Schaff
    • 3
  1. 1.Lawrence Berkeley National LaboratoryBerkeleyUSA
  2. 2.Dept. of Chemical EngineeringUniversity of FloridaGainesvilleUSA
  3. 3.Dept. of Electrical and Computer EngineeringCornell UniversityIthacaUSA

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