InN Nanorods and Epilayers: Similarities and Differences
Transmission electron microscopy was applied to study InN nanorods grown on the a-, c- and r-plane of Al2O3, and (111) Si substrates by non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Single crystal nanorod growth was obtained on all substrates. However, the shape of the nanorods varied depending on the substrate used. For example, nanorods grown on r-plane sapphire and (111) Si have sharp tips. In contrast, growth on a- and c- planes of Al2O3 results in flat tips with clear facets on their sides. The structural quality of these nanorods and their growth polarity are compared to crystalline quality, surface roughness, defects and growth polarity of InN layers grown by MBE on the same planes of Al2O3.
KeywordsElectron Energy Loss Spectroscopy Growth Polarity Convergent Beam Electron Diffraction Convergent Beam Electron Diffraction Pattern Electron Energy Loss Spectroscopy Study
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