Summary
The annealing of Pt/Si and Ir/Si structures (300, 400 and 500°) leads to the formation of platinum or iridium silicides, respectively. However, the silicidation process proceeds in different ways in both structures. In the Pt/Si structure the silicidation process is completed at each temperature. Annealing of the Ir/Si structure at 300 and 400°C causes only a partial reaction and the formation of a very thin amorphous iridium silicide layer at the Ir/Si interface. At 500°C the reaction is completed and forms a crystalline silicide layer, which consists of two phases.
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Łaszcz, A. et al. (2008). TEM Study of the Silicidation Process in Pt/Si and Ir/Si Structures. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_74
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_74
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