Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers
A grid of regularly-distributed misfit dislocation (MD) arrays is observed and analyzed by plan-view and cross-sectional transmission electron microscopy in the GaN films grown on AlN buffer layers. A good agreement between experiment and theoretical prediction indicates that the MDs are introduced first by interfacial migration of pre-existing threading dislocations (TDs) in AlN and then gradually form into a grid by direct nucleation around the misfit segments of TDs.
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