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Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers

  • J Bai
  • T Wang
  • P J Parbrook
  • K B Lee
  • Q Wang
  • A G Cullis
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

A grid of regularly-distributed misfit dislocation (MD) arrays is observed and analyzed by plan-view and cross-sectional transmission electron microscopy in the GaN films grown on AlN buffer layers. A good agreement between experiment and theoretical prediction indicates that the MDs are introduced first by interfacial migration of pre-existing threading dislocations (TDs) in AlN and then gradually form into a grid by direct nucleation around the misfit segments of TDs.

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • J Bai
    • 1
  • T Wang
    • 1
  • P J Parbrook
    • 1
  • K B Lee
    • 1
  • Q Wang
    • 1
  • A G Cullis
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK

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