Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPECVD for Optoelectronic Applications
Structural analysis of nanocrystalline silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition was carried out by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cross section are described and discussed. These results are compared to those obtained by atomic force microscopy. Growth modes and relevant structural changes are tentatively correlated to experimental parameters.
KeywordsHigh Resolution Transmission Electron Microscopy Dilution Ratio Conductive Atomic Force Microscopy Amorphous Area HRTEM Micrograph
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