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Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPECVD for Optoelectronic Applications

  • M Texier
  • M Acciarri
  • S Binetti
  • D Cavalcoli
  • A Cavallini
  • D Chrastina
  • G Isella
  • M Lancin
  • A Le Donne
  • A Tomasi
  • B Pichaud
  • S Pizzini
  • M Rossi
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

Structural analysis of nanocrystalline silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition was carried out by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cross section are described and discussed. These results are compared to those obtained by atomic force microscopy. Growth modes and relevant structural changes are tentatively correlated to experimental parameters.

Keywords

High Resolution Transmission Electron Microscopy Dilution Ratio Conductive Atomic Force Microscopy Amorphous Area HRTEM Micrograph 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • M Texier
    • 1
  • M Acciarri
    • 2
  • S Binetti
    • 2
  • D Cavalcoli
    • 3
  • A Cavallini
    • 3
  • D Chrastina
    • 4
  • G Isella
    • 4
  • M Lancin
    • 1
  • A Le Donne
    • 2
  • A Tomasi
    • 2
  • B Pichaud
    • 1
  • S Pizzini
    • 2
  • M Rossi
    • 3
  1. 1.TECSEN, UMR 6122 CNRS, Université Paul CézanneMarseille cedex 20France
  2. 2.Dipartimento di Scienza dei MaterialiUniversità di Milano-BicoccaMilanoItaly
  3. 3.Dipartimento di FisicaUniversità di BolognaBolognaItaly
  4. 4.Dipartimento di Fisica del Politecnico di Milano Polo Regionale di ComoLNESSComoItaly

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