Investigating the Capping of InAs Quantum Dots by InGaAs
The aim of this work is to investigate the capping of InAs quantum dots by InGaAs using atomic force microscopy in plan-view geometry and correlate this topographical information with scanning transmission electron microscopy observations that elucidate the microstructure and chemistry of these quantum dots. Preferential growth of the Ga-rich cap around dot islands may be due to the unfavourable lattice parameter associated with high In concentrations at dot apices.
KeywordsScanning Transmission Electron Microscopy InGaAs Quantum Well Scanning Transmission Electron Microscopy Observation Scanning Transmission Electron Microscopy Result 400nm Thick GaAs
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