Summary
The aim of this work is to investigate the capping of InAs quantum dots by InGaAs using atomic force microscopy in plan-view geometry and correlate this topographical information with scanning transmission electron microscopy observations that elucidate the microstructure and chemistry of these quantum dots. Preferential growth of the Ga-rich cap around dot islands may be due to the unfavourable lattice parameter associated with high In concentrations at dot apices.
Keywords
- Scanning Transmission Electron Microscopy
- InGaAs Quantum Well
- Scanning Transmission Electron Microscopy Observation
- Scanning Transmission Electron Microscopy Result
- 400nm Thick GaAs
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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© 2008 Springer Science+Business Media B.V.
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Liew, S., Walther, T., Irsen, S., Hopkinson, M., Skolnick, M., Cullis, A. (2008). Investigating the Capping of InAs Quantum Dots by InGaAs. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_57
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_57
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8614-4
Online ISBN: 978-1-4020-8615-1
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