Investigating the Capping of InAs Quantum Dots by InGaAs

  • S L Liew
  • T Walther
  • S Irsen
  • M Hopkinson
  • M S Skolnick
  • A G Cullis
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

The aim of this work is to investigate the capping of InAs quantum dots by InGaAs using atomic force microscopy in plan-view geometry and correlate this topographical information with scanning transmission electron microscopy observations that elucidate the microstructure and chemistry of these quantum dots. Preferential growth of the Ga-rich cap around dot islands may be due to the unfavourable lattice parameter associated with high In concentrations at dot apices.

Keywords

Migration Argon Milling GaAs HeNe 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40, 939CrossRefADSGoogle Scholar
  2. 2.
    Ustinov V M et al 1999 Appl. Phys. Lett. 74, 2815CrossRefADSGoogle Scholar
  3. 3.
    Seravalli L, Frigeri P, Minelli M, Allegri P, Avanzini V and Franchi S 2005 Appl. Phys. Lett. 87, 063101CrossRefADSGoogle Scholar
  4. 4.
    Lester L F, Stintz A, Li H, Newell T C, Pease E A, Fuchs B A and Malloy K J 1999 IEEE Photonics Tech. Lett. 11, 931CrossRefGoogle Scholar
  5. 5.
    Walther T, Cullis A G, Norris D J and Hopkinson M 2001 Phys Rev. Lett. 86, 2381PubMedCrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • S L Liew
    • 1
  • T Walther
    • 2
  • S Irsen
    • 3
  • M Hopkinson
    • 2
  • M S Skolnick
    • 2
  • A G Cullis
    • 2
  1. 1.Dept. of Physics and AstronomyUniv. of SheffieldUK
  2. 2.Dept. of Electronic and Electrical Eng.Univ. of SheffieldUK
  3. 3.Center of Advanced European Studies and Research (CAESAR)Germany

Personalised recommendations