Summary
The structural integrity, composition and interface quality of tunnel barriers in hybrid ferromagnet-semiconductor structures will have a significant effect on the properties of spintronic devices. We present the results of a study of an amorphous MgO tunnel barrier in a Co/MgO/InAs multilayer structure. Optimum growth parameters for MgO and surface treatment of InAs have been identified by a systematic electron microscopy investigation. Electron energy loss spectroscopy has been used to obtain information on composition and interface quality in the multilayer structures.
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Eustace, D. et al. (2008). (S)TEM Characterisation of InAs/MgO/Co Multilayers. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_32
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_32
Publisher Name: Springer, Dordrecht
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Online ISBN: 978-1-4020-8615-1
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