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Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy

  • F Hüe
  • M J Hÿtch
  • J-M Hartmann
  • Y Bogumilowicz
  • A Claverie
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

We measure elastic strains in Si grown on Si1−x Gexsubstrates by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Images are analysed using geometric phase analysis (GPA). We carry out finite element modeling (FEM) of these systems coupled with full atomistic multislice simulations of the deformed structures. Comparison of the results from experiment and simulation reveals the high accuracy and reliability which can be obtained. Strain mapping with HRTEM benefits from the high signal-to-noise ratio of aberration-corrected images. In addition, images can be obtained for thicker crystals which limits thin film relaxation effects and facilitates specimen preparation.

Keywords

Specimen Thickness Image Simulation Finite Element Method Simulation Finite Element Method Modelling Virtual Substrate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • F Hüe
    • 1
  • M J Hÿtch
    • 1
  • J-M Hartmann
    • 1
    • 2
  • Y Bogumilowicz
    • 1
    • 3
  • A Claverie
    • 1
  1. 1.CEMES-CNRSToulouseFrance
  2. 2.CEA-LETIGrenobleFrance
  3. 3.STMicroelectronicsCrolles CedexFrance

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