Summary
With impressive improvements in instrumental resolution and a simultaneous minimisation of image delocalisation, high-resolution transmission electron microscopy is presently enjoying increased popularity in the atomic-scale imaging of lattice imperfections in a variety of solids. In the present overview, recent progress in spherical aberration corrected imaging performed in troika with the ultra-precise measurement of residual wave aberrations and the numerical retrieval of the exit plane wavefunction from focal series of micrographs is illustrated by highlighting their combined use for the atomic-scale measurement of common lattice imperfections observed in compound semiconductors and high-temperature superconductors.
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Tillmann, K. et al. (2008). Progress in Aberration-Corrected High-Resolution Transmission Electron Microscopy of Crystalline Solids. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_30
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