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Concentration Evaluation in Nanometre-Sized InxGa1-xN Islands Using Transmission Electron Microscopy

  • A Pretorius
  • K Müller
  • T Yamaguchi
  • R Kröger
  • D Hommel
  • A Rosenauer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

In this work the indium concentration of uncapped InGaN samples is measured by three different transmission electron microscopy approaches which are based on measurement of local lattice plane distances. In the case of three dimensional, nanometre-sized, uncapped InGaN islands, an increase of the indium concentration from the base of the islands toward their tip is observed. Additionally, an indication is presented that the local indium concentration in the islands is influenced by the vicinity of other islands.

Keywords

High Resolution Transmission Electron Microscopy High Resolution Transmission Electron Microscopy Wetting Layer Superposition Method Indium Concentration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40, 939CrossRefADSGoogle Scholar
  2. 2.
    Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89, 5815CrossRefADSGoogle Scholar
  3. 3.
    Davydov V Y, Klochikhin A A, Emtsev V V, Ivanov S V, Vekshin V V, Bechstedt F, Furthmüller J, Harima H, Mudryi A V, Hashimoto A, Yamamoto A, Aderhold J, Graul J and Haller E E 2002 phys. stat. sol. b 230, R4CrossRefGoogle Scholar
  4. 4.
    Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H and Schaff W J 2002 Appl. Phys. Lett. 80, 4741CrossRefADSGoogle Scholar
  5. 5.
    Matsuoka T, Okamoto H, Nakao M, Harima H and Kurimoto E 2002 Appl. Phys. Lett. 81, 1246CrossRefADSGoogle Scholar
  6. 6.
    Vegard L 1921 Z. Phys. 5, 17CrossRefADSGoogle Scholar
  7. 7.
    Rosenauer A, Gerthsen D and Potin V 2006 phys. stat. sol. a 203, 176CrossRefADSGoogle Scholar
  8. 8.
    Coene W M J, Thust A, op de Beeck M and van Dyck D 1996 Ultramicroscopy 64, 109CrossRefGoogle Scholar
  9. 9.
    Rosenauer A, Kaiser S, Reisinger T, Zweck J and Gebhardt W 1996 Optik 102, 63Google Scholar
  10. 0.
    Shimizu M, Kawaguchi Y, Hiramatsu K and Sawaki N 1997 Sol.-Stat. Elektron. 41, 145CrossRefADSGoogle Scholar
  11. 1.
    Zhang J, Hao M, Li P and Chua S J 2002 Appl. Phys. Lett. 80, 485CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • A Pretorius
    • 1
  • K Müller
    • 1
  • T Yamaguchi
    • 1
  • R Kröger
    • 1
  • D Hommel
    • 1
  • A Rosenauer
    • 1
  1. 1.Institute of Solid State PhysicsUniversity of BremenBremenGermany

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