Analysis of Ge:Mn Magnetic Semiconductor Layers by XPS and Auger Electron Spectroscopy/Microscopy
Thin layers of diluted magnetic semiconductors, based on germanium supersaturated with manganese grown on GaAs substrates, were studied by XPS and AES. XPS measurements reveal the change of line shapes for germanium, manganese and oxygen in surface layers in comparison with deeper layers as a transition from the oxidized form for germanium and manganese on and near the surface to the unoxidized state in deeper layers. XPS spectra of valence electrons indicate that the density of states in the valence band of the Ge:Mn ferromagnetic structures does not correspond to a mechanical mixture of germanium and manganese.
KeywordsAuger Electron Spectroscopy Dilute Magnetic Semiconductor Anomalous Hall Effect Depth Distribution Profile Erosive Laser Plasma
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- 4.Digital Database of XPS Spectra, XPS International, www.xpsdata.com