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Nanoscale Characterisation of MBE-Grown GaMnN/(001) GaAs

  • M W Fay
  • Y Han
  • S V Novikov
  • K W Edmonds
  • B L Gallagher
  • R P Campion
  • C R Staddon
  • T Foxon
  • P D Brown
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn distributions within (Ga,Mn)N epilayers. Improved incorporation efficiency of Mn is associated with growth under N-rich conditions, but Mn incorporation may be enhanced under Ga-rich conditions at reduced growth temperatures. The surfactant behaviour of Mn during the growth of this spintronic system determines the resultant alloy composition.

Keywords

Reflection High Energy Electron Diffraction Plasma Assisted Molecular Beam Epitaxy Energy Filter Transmission Electron Microscopy Nanoscale Characterisation Surfactant Behaviour 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • M W Fay
    • 1
  • Y Han
    • 1
  • S V Novikov
    • 2
  • K W Edmonds
    • 2
  • B L Gallagher
    • 2
  • R P Campion
    • 2
  • C R Staddon
    • 2
  • T Foxon
    • 2
  • P D Brown
    • 2
  1. 1.School of Mechanical, Materials and Manufacturing EngineeringUniversity of NottinghamNottingham
  2. 2.School of Physics and AstronomyUniversity of NottinghamNottingham

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