On the Nature of Eu in Eu-Doped GaN

  • J S Barnard
  • Y S Beyer
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed on GaN substrate acts as a hard-mask for the fabrication of nanostructures. In subsequent dry etch processes, arrays of holes in a nanostructure were formed on top of the LED. The structural properties of the nanopores are characterized by scanning electron microscopy (SEM), while photoluminescence (PL) measurements showed a 25% enhancement of light emission intensity, attributed to improved light extraction.


Scanning Transmission Electron Microscope Gallium Nitride Defect Cluster Candidate Site Resolution Electron Energy Loss Spectroscopy 
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  1. 1.
    Heikenfeld J, Garter M, Lee D S, Birkhahn R and Steckl A S 1999 Appl. Phys. Lett. 75, 1189CrossRefADSGoogle Scholar
  2. 2.
    Lorenz K, Wahl U, Alves E, Dalmasso S, Martin R W, O'Donnell K P, Ruffenech S and Briot O 2004 Appl. Phys. Lett. 84, 2712CrossRefADSGoogle Scholar
  3. 3.
    Bang H, Morishima S, Li Z, Akimoto K, Nomura M and Yagi E 2002 J. Crystal Growth 237–239, 1027CrossRefGoogle Scholar
  4. 4.
    Kaiser U, Muller D A, Grazul J L, Chuvilin A and Kawasaki M 2002 Nature Mater. 1, 102CrossRefADSGoogle Scholar
  5. 5.
    E.J. Kirkland 1998 Advanced Computing in Electron Microscopy (Plenum Press)Google Scholar
  6. 6.
    Ziegler J 2003 (accessed June 2006)
  7. 7.
    Mory C, Colliex C and Cowley J M 1987 Ultramicroscopy 21, 171CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • J S Barnard
    • 1
  • Y S Beyer
    • 2
  1. 1.Department of Material ScienceUniversity of Cambridge
  2. 2.New Hall

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