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Elastic Strain Distribution in GaN/AlN Quantum Dot Structures: Theory and Experiment

  • A Andreev
  • E Sarigiannidou
  • E Monroy
  • B Daudin
  • J Rouvière
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

We present a theory of strain distribution in GaN/AlN quantum dot (QD) structures and compare the results of calculations with experimentally measured strain maps from HRTEM images using geometrical phase analysis. We find that the AlN spacers situated between the wetting layers are almost fully relaxed. On the contrary, the AlN spacers located between the vertically correlated GaN QDs are found to be in a tensile strain state. This result demonstrates that the biaxial strain approximation is not valid for the case of a three-dimensional system like a QD.

Keywords

HRTEM Image Wetting Layer Molecular Beam Epitaxy Chamber Geometrical Phase Analysis Tensile Strain State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • A Andreev
    • 1
  • E Sarigiannidou
    • 2
  • E Monroy
    • 3
  • B Daudin
    • 3
  • J Rouvière
    • 3
  1. 1.Advanced Technology InstituteUniversity of SurreyGuildfordU.K.
  2. 2.INP Grenoble — MINATECGrenoble Cedex 1France
  3. 3.CEA-Grenoble DRFMC/SP2M/LEMMA GEM-minatec 17 rue des MartyrsGrenoble Cedex 9France

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