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Microscopy of Semiconducting Materials 2007 pp 81–84Cite as

Nanostructures on GaN by Microsphere Lithography

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

Summary

The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed on GaN substrate acts as a hard-mask for the fabrication of nanostructures. In subsequent dry etch processes, arrays of holes in a nanostructure were formed on top of the LED. The structural properties of the nanopores are characterized by scanning electron microscopy (SEM), while photoluminescence (PL) measurements showed a 25% enhancement of light emission intensity, attributed to improved light extraction.

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Author information

Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

    W N Ng, K N Hui, X H Wang, C H Leung, P T Lai & H W Choi

Authors
  1. W N Ng
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  2. K N Hui
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  3. X H Wang
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  4. C H Leung
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  5. P T Lai
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  6. H W Choi
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Ng, W., Hui, K., Wang, X., Leung, C., Lai, P., Choi, H. (2008). Nanostructures on GaN by Microsphere Lithography. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_19

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