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Nanostructures on GaN by Microsphere Lithography

  • W N Ng
  • K N Hui
  • X H Wang
  • C H Leung
  • P T Lai
  • H W Choi
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed on GaN substrate acts as a hard-mask for the fabrication of nanostructures. In subsequent dry etch processes, arrays of holes in a nanostructure were formed on top of the LED. The structural properties of the nanopores are characterized by scanning electron microscopy (SEM), while photoluminescence (PL) measurements showed a 25% enhancement of light emission intensity, attributed to improved light extraction.

Keywords

Field Emission Scanning Electron Microscopy Image Silica Microsphere Light Extraction Void Region Light Extraction Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • W N Ng
    • 1
  • K N Hui
    • 1
  • X H Wang
    • 1
  • C H Leung
    • 1
  • P T Lai
    • 1
  • H W Choi
    • 1
  1. 1.Department of Electrical and Electronic EngineeringThe University of Hong KongHong Kong

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