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Microscopy of Semiconducting Materials 2007 pp 77–80Cite as

Microstructure of (Ga,Fe)N Films Grown by Metal-Organic Chemical Vapour Deposition

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

Summary

We report on the structural and chemical analysis of (Ga,Fe)N films grown by metal-organic chemical vapour deposition using transmission electron microscopy and energy dispersive X-ray spectroscopy. In homogeneously Fe-doped GaN, we have found Fe-rich nanoclusters to be assigned to α-Fe and ε-Fe3N. In GaN δ-doped with Fe and co-doped with 5Mg, we have observed a significant reduction of the threading dislocations to be associated with the growth interruption, while the Fe ions tend to float to the surface.

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Author information

Authors and Affiliations

  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, Cambridge, A-4040 Linz, Austria

    T Li, C Simbrunner, A Navarro-Quezada, M Wegscheider, M Quast & A Bonanni

Authors
  1. T Li
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  2. C Simbrunner
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  3. A Navarro-Quezada
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  4. M Wegscheider
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  5. M Quast
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  6. A Bonanni
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Li, T., Simbrunner, C., Navarro-Quezada, A., Wegscheider, M., Quast, M., Bonanni, A. (2008). Microstructure of (Ga,Fe)N Films Grown by Metal-Organic Chemical Vapour Deposition. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_18

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