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An Initial Exploration of GaN Grown on a Ge-(111) Substrate

  • Y Zhang
  • C McAleese
  • H Xiu
  • C J Humphreys
  • R R Lieten
  • S Degroote
  • G Borghs
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Using electron microscopy techniques, two types of defect have been identified in a GaN epilayer grown directly on a Ge-(111) substrate using plasma assisted molecular beam epitaxy (PAMBE) without any intermediate buffer layers. One defect, initially observed with optical microscopy, has a triangular shape in plan-view imaging and is essentially a faceted void in the Ge extending from the interface into the substrate. Another type of defect is the formation of domains due to the misorientation of the GaN relative to the Ge substrate with a twist of ±4° about the GaN-[0002] axis.

Keywords

Zone Axis Scanning Transmission Electron Microscopy Large Lattice Mismatch Plasma Assisted Molecular Beam Epitaxy Transmission Electron Microscopy Sample Preparation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Liu L and Edgar J H 2002 Mater. Sci. Eng. R. 37, 61CrossRefGoogle Scholar
  2. 2.
    Lieten R R, Degroote S, Cheng K, Leys M and Borghs G M 2006 Appl. Phys. Lett. 89, 252118CrossRefADSGoogle Scholar
  3. 3.
    Weyher J L, Brown P D, Zauner A R A, Muller S, Boothroyd C B, Foord D T, Hageman P R, Humphreys C J, Larsen P K, Grzegory I and Porowski S 1999 J. Crystal Growth 204, 419CrossRefADSGoogle Scholar
  4. 4.
    Kuwano N, Hijikuro M, Hata S, Takeuchi M and Aoyahi Y 2007 J. Crystal Growth 298, 284CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • Y Zhang
    • 1
  • C McAleese
    • 1
  • H Xiu
    • 1
  • C J Humphreys
    • 1
  • R R Lieten
    • 2
  • S Degroote
    • 2
  • G Borghs
    • 2
  1. 1.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK
  2. 2.Interuniversity Microelectronics CenterBelgium

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