GaN Layers Grown by MOCVD on Composite SiC Substrate
GaN based high electron mobility transistor structures were grown onto special composite substrates by metal-organic chemical vapor deposition. These substrates consist of a thin single crystalline SiC layer transferred onto polycrystalline SiC wafer by a technique involving ion implantation and wafer bonding. Transmission electron microscopy of these structures has proven that their epitaxial quality and defect structure is the same as of the reference samples deposited onto single crystalline bulk SiC substrate.
KeywordsCross Sectional Transmission Electron Microscopy High Electron Mobility Transistor Wafer Bonding Composite Substrate High Resolution Transmission Electron Microscopy Micrographs
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