GaN Layers Grown by MOCVD on Composite SiC Substrate

  • L Tóth
  • L Dobos
  • B Pécz
  • M A di Forte Poisson
  • R Langer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

GaN based high electron mobility transistor structures were grown onto special composite substrates by metal-organic chemical vapor deposition. These substrates consist of a thin single crystalline SiC layer transferred onto polycrystalline SiC wafer by a technique involving ion implantation and wafer bonding. Transmission electron microscopy of these structures has proven that their epitaxial quality and defect structure is the same as of the reference samples deposited onto single crystalline bulk SiC substrate.

Keywords

Cross Sectional Transmission Electron Microscopy High Electron Mobility Transistor Wafer Bonding Composite Substrate High Resolution Transmission Electron Microscopy Micrographs 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Celler G K and Cristoloveanu S 2003 J. of Appl. Phys. 93, 4955CrossRefADSGoogle Scholar
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    Jahnen B, Albrecht M, Dorsch W, Christiansen S, Strunk H P, Hanser D and Davis R F 1998 MRS Internet J. Nitride Semicond. Res. 3, 39Google Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • L Tóth
    • 1
  • L Dobos
    • 1
  • B Pécz
    • 1
  • M A di Forte Poisson
    • 2
  • R Langer
    • 3
  1. 1.Research Institute for Technical Physics and Materials Science of the Hungarian Academy of SciencesHungary
  2. 2.ALCATEL-THALES III-V LaboratoriesRoute de NozayFrance
  3. 3.PICOGIGA International SASPlace Marcel RebuffatFrance

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