Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire

  • R  Kröger
  • T Paskova
  • A Rosenauer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies on a-plane GaN films grown by hydride vapour phase epitaxy reveal basal plane stacking faults, with a density in the range of 105 cm−1 as a major planar defect in this type of growth. In addition, prismatic and pyramidal stacking faults were found lying in the {1–100} and {1–102} planes. The non-basal plane stacking faults are found in conjunction with nanopipe-like voids emerging at the film/substrate interface. It is suggested that the formation of the prismatic and pyramidal stacking faults is caused by interfacial strain during the early stage of growth.

Keywords

Anisotropy Nitride Hydride Sapphire Wurtzite 

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • R  Kröger
    • 1
  • T Paskova
    • 1
  • A Rosenauer
    • 1
  1. 1.Institute of Solid State PhysicsUniversity of BremenBremenGermany

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