Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire

  • R  Kröger
  • T Paskova
  • A Rosenauer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)


The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies on a-plane GaN films grown by hydride vapour phase epitaxy reveal basal plane stacking faults, with a density in the range of 105 cm−1 as a major planar defect in this type of growth. In addition, prismatic and pyramidal stacking faults were found lying in the {1–100} and {1–102} planes. The non-basal plane stacking faults are found in conjunction with nanopipe-like voids emerging at the film/substrate interface. It is suggested that the formation of the prismatic and pyramidal stacking faults is caused by interfacial strain during the early stage of growth.


Partial Dislocation Nitride Film Hydride Vapour Phase Epitaxy Field Transmission Electron Microscopy Image Stack Fault Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Craven M D, Lim S H, Wu F, Speck J S and DenBaars S P 2002 Appl. Phys. Lett. 81, 469CrossRefADSGoogle Scholar
  2. 2.
    Martin D, Napierala J, Ilegems M, Butté R and Grandjean N 2006 Appl. Phys. Lett. 88, 241914CrossRefADSGoogle Scholar
  3. 3.
    Haskell B A, Wu F, Craven M D, Matsuda S, Fini P T, Fujii T, Fujito K, DenBaars S P, Speck J S and Nakamura S 2003 Appl. Phys. Lett. 83, 644CrossRefADSGoogle Scholar
  4. 4.
    Liu T Y, Trampert A, Sun Y J, Brandt O and Ploog K H 2004 Phil. Mag. Letters 84, 435CrossRefADSGoogle Scholar
  5. 5.
    Zakharov D N, Liliental-Weber Z, Wagner B, Reitmeier Z J, Preble E A and Davis R F 2005 Phys. Rev. B 71, 235334CrossRefADSGoogle Scholar
  6. 6.
    Steeds J W 1973 Introduction to Anisotropic Elasticity Theory of Dislocations, Clarendon Press, OxfordzbMATHGoogle Scholar
  7. 7.
    Stampfl C and van de Walle C 1998 Phys. Rev. B, 57, R15 052CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • R  Kröger
    • 1
  • T Paskova
    • 1
  • A Rosenauer
    • 1
  1. 1.Institute of Solid State PhysicsUniversity of BremenBremenGermany

Personalised recommendations