Growth of c-Plane GaN Films on (100) γ-LiAlO2 by Hydride Vapour Phase Epitaxy
Structural analysis of c-plane GaN nucleation layers on (100) γLiAlO2 and freestanding 2 inch c-plane GaN wafers is presented. The nucleation layers contain a number of hexagonal pits. The pit formation in nucleation layers might be an origin for the formation of macroscopic pyramids, which are coupled on V-pits in the freestanding 2 inch GaN layers. The pyramids start growing at the interface to LiAlO2. They consist of wurtzite GaN, which is brown in colour. The brown GaN regions show an extremely high defect density. The freestanding HVPE-grown GaN layers have Ga polarity.
KeywordsScanning Transmission Electron Microscopy Nucleation Layer High Defect Density Convergent Beam Electron Diffraction Hydride Vapour Phase Epitaxy
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