Advertisement

Growth of c-Plane GaN Films on (100) γ-LiAlO2 by Hydride Vapour Phase Epitaxy

  • A Mogilatenko
  • W Neumann
  • E Richter
  • M Weyers
  • B Velickov
  • R Uecker
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

Structural analysis of c-plane GaN nucleation layers on (100) γLiAlO2 and freestanding 2 inch c-plane GaN wafers is presented. The nucleation layers contain a number of hexagonal pits. The pit formation in nucleation layers might be an origin for the formation of macroscopic pyramids, which are coupled on V-pits in the freestanding 2 inch GaN layers. The pyramids start growing at the interface to LiAlO2. They consist of wurtzite GaN, which is brown in colour. The brown GaN regions show an extremely high defect density. The freestanding HVPE-grown GaN layers have Ga polarity.

Keywords

Scanning Transmission Electron Microscopy Nucleation Layer High Defect Density Convergent Beam Electron Diffraction Hydride Vapour Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Maruska H P, Hill D W, Chou M C, Gallagher J J and Chai B H 2003 Opto-electron. Rev. 11, 7Google Scholar
  2. 2.
    Waltereit P, Brandt O, Ramsteiner M, Trampert A, Grahn H T, Menniger J, Reiche M, Uecker R, Reiche P and Ploog K H 2000 Phys. Stat. Sol. (a) 180, 133CrossRefADSGoogle Scholar
  3. 3.
    Reed M D, Kryliouk O M, Mastro M A and Anderson T J 2005 J. Cryst. Growth 274, 14CrossRefADSGoogle Scholar
  4. 4.
    Richter E, Hennig Ch, Zeimer U, Weyers M, Tränkle G, Reiche P, Ganschow S, Uecker R, and Peters K 2006 Phys. Stat. Sol. (c) 3, 1439CrossRefGoogle Scholar
  5. 5.
    Mogilatenko A, Neumann W, Richter E, Weyers M, Velickov B and Uecker R, submitted to J. Appl. Phys.Google Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • A Mogilatenko
    • 1
  • W Neumann
    • 1
  • E Richter
    • 2
  • M Weyers
    • 2
  • B Velickov
    • 3
  • R Uecker
    • 3
  1. 1.Institut für PhysikHumboldt-Universität zu BerlinBerlinGermany
  2. 2.Ferdinand-Braun-Institut für HöchstfrequenztechnikBerlinGermany
  3. 3.Institut für KristallzüchtungBerlinGermany

Personalised recommendations