Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers

  • S. J. Smith
  • S. J. B. Przeslak
  • G. R. Nash
  • C. J. Storey
  • A. D. Andreev
  • A. Krier
  • Min Yin
  • S. D. Coomber
  • L. Buckle
  • M. T. Emeny
  • T. Ashley
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

AlxGayIn1−x−ySb heterostructures suitable for laser applications have been grown on GaAs substrates. The structures have been analysed using X-ray diffraction and photoluminescence. Laser diodes have been fabricated by wet etching 20μm wide bars and cleaving into either 1mm or 2mm lengths. The electroluminescence of these bars has been investigated over a range of temperatures.

Keywords

Hydrocarbon GaAs Nash Emissivity 

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References

  1. 1.
    Andreev A. D., O’Reilly E. P., Adams A. R., and Ashley T.: ‘Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers’, Appl. Phys. Lett., 78, 2640–2642, 2001CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • S. J. Smith
    • 1
  • S. J. B. Przeslak
    • 2
  • G. R. Nash
    • 1
    • 2
  • C. J. Storey
    • 1
  • A. D. Andreev
    • 3
  • A. Krier
    • 4
  • Min Yin
    • 4
  • S. D. Coomber
    • 1
  • L. Buckle
    • 1
  • M. T. Emeny
    • 1
  • T. Ashley
    • 1
  1. 1.QinetiQMalvernUK
  2. 2.Photonics Group, Department of Electrical and Electronic EngineeringUniversity of BristolUK
  3. 3.Department of Physics, Advanced Technology InstituteUniversity of SurreyGuildfordUK
  4. 4.Department of PhysicsLancaster UniversityLancasterUK

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