InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb2 and As2 fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450–320°C) which gives rise to the variation of the emission wavelength within the 3.6–4.0μm range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2, As2) and (Sb4, As4) is also presented.
KeywordsMolecular Beam Epitaxy Threshold Current Density Molecular Beam Epitaxial Growth Double Heterostructure Laser Pendellosung Fringe
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