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Narrow Gap Semiconductors 2007 pp 93–95Cite as

Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 119))

Abstract

We present results from a numerical study on carrier dynamics, heating, and melting damage threshold in a 10 μm thick layer of Hg0.72Cd0.28Te induced by 1 μs long laser pulses at photon energies close to the band gap. At the shortest wavelength of 3.8 μm the simulations indicate that surface melting will occur at fluence levels in the range of 2–3 J/cm2, while fluences of more than 10 J/cm2 will be required for melting at wavelengths beyond 5 μm.

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References

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Author information

Authors and Affiliations

  1. FFI (Norwegian Defence Research Establishment), P.O. Box 25, NO-2027, Kjeller, Norway

    A. S. Villanger, T. Brudevoll & K. Stenersen

Authors
  1. A. S. Villanger
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  2. T. Brudevoll
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  3. K. Stenersen
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Editor information

Editors and Affiliations

  1. Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH, UK

    Ben Murdin  & Steve Clowes  & 

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Villanger, A.S., Brudevoll, T., Stenersen, K. (2008). Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_23

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