Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy

  • Ichiro Shibasaki
  • Hirotaka Geka
  • Atsusi Okamoto
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Electron mobilities of InSb, InSb/AlInSb and InAsSb/AlInSb grown on GaAs(100) were compared as a function of layer thickness and temperature. InAs0.1Sb0.9 thin active layers sandwiched by Al0.1In0.9Sb layers showed the smallest thickness dependence and very large electron mobility at less than 500nm thickness. Basic transport properties and Sn doping effects of the InAs0.1Sb0.9 were studied.

Keywords

GaAs AlInSb 

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References

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    A. Okamoto and I. Shibasaki, Transport properties of Sn-doped InSb thin films and applications to Hall element, J. of Crystal Growth, 251, 2003, p.560CrossRefADSGoogle Scholar
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    A. Okamoto, H. Geka, I. Shibasaki, and K. Yoshida, Transport properties of InSb and InAs thin films on GaAs substrates, J. of Crystal Growth, 278, 2005, p.604CrossRefADSGoogle Scholar
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    H. Gaka, A. Okamoto, S. Yamada, H. Goto, K. Yoshida, and I. Shibasaki, Properties of InSb single-crystal thin films sandwiched by Al0.1 In0.9 Sb layers with 0.5% lattice mismatch grown on GaAs, J. of Crystal Growth, 301–302, 2007, p. 152CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • Ichiro Shibasaki
    • 1
  • Hirotaka Geka
    • 2
  • Atsusi Okamoto
    • 2
  1. 1.Asahikasei CorporationShizuokaJapan
  2. 2.Ashikasei EMD CorporationShizuokaJapan

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