Abstract
Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III–V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover. The Γ-L crossover is predicted for realistic self-assembled InSb/GaSb (001) dots, in which the lowest interband transition is from the L-valley state. Available experimental PL data were found to be in good agreement with the crossover phenomenon.
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Rybchenko, S.I., Gupta, R., Itskevich, I.E., Haywood, S.K. (2008). L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_20
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_20
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