Abstract
A Monte Carlo (MC) technique is employed to investigate stationary electron transport in lead telluride (PbTe). Results for electron mobility as a function of lattice temperature, free carrier concentration, and electric field are compared with experimental data and the few available other Monte Carlo simulation results.
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References
Rowe, D.M., CRC Handbook of Thermoelectrics, CRC Press, 1995
Heiss, W. et al., Appl. Phys. Lett. 78, 862–864, 2001
Allgaier, R.S. and Scanlon, W.W., Phys. Rev. 111, 1029–1037, 1958
Ravich, Y.I. et al., Phys.Status Solidi (b) 43, 453–469, 1971
Ueta, A.Y. et al., Thin Solid Films 306, 320–325, 1997
Krotkus, A. et al., Solid State Electronics 26, 605–609, 1983
Chattopadhyay, D. and Purkait, N.N. J. Appl. Phys. 54, 6439–6442, 1983
Zayachuk D.M., Semiconductors, vol. 31, 173–176, 1997
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Palankovski, V., Wagner, M., Heiss, W. (2008). Monte Carlo Simulation of Electron Transport in PbTe. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_19
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_19
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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