Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications

  • S. D. Coomber
  • L. Buckle
  • P. H. Jefferson
  • D. Walker
  • T. D. Veal
  • C. F. McConville
  • T. Ashley
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

The addition of a small percentage of nitrogen to GaSb or InSb is predicted to move their response wavelengths into the long wavelength IR range due to the influence of band-gap bowing. We report the growth of GaNxSb1−x and InNxSb1−x by MBE, using an r.f. plasma nitrogen source. We demonstrate high structural quality, as determined by XRD, and FTIR absorption measurements show a shift in the cut-off wavelength to over 3 μm for GaNSb and over 11 μm for InNSb, allowing for the effect of Moss-Burstein band filling.

Keywords

Nitride GaSb 

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • S. D. Coomber
    • 1
  • L. Buckle
    • 1
  • P. H. Jefferson
    • 2
  • D. Walker
    • 2
  • T. D. Veal
    • 2
  • C. F. McConville
    • 2
  • T. Ashley
    • 1
  1. 1.QinetiQ Ltd.MalvernUK
  2. 2.Dept. of PhysicsUniversity of WarwickCoventryUK

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